IXTC160N10T IXYS, IXTC160N10T Datasheet - Page 4

MOSFET N-CH 100V 83A ISOPLUS220

IXTC160N10T

Manufacturer Part Number
IXTC160N10T
Description
MOSFET N-CH 100V 83A ISOPLUS220
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet

Specifications of IXTC160N10T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
83A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
132nC @ 10V
Input Capacitance (ciss) @ Vds
6600pF @ 25V
Power - Max
140W
Mounting Type
Through Hole
Package / Case
ISOPLUS220™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0075 Ohms
Drain-source Breakdown Voltage
100 V
Continuous Drain Current
83 A
Power Dissipation
140 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
83
Rds(on), Max, Tj=25°c, (?)
0.0075
Ciss, Typ, (pf)
6600
Qg, Typ, (nc)
132
Trr, Typ, (ns)
60
Trr, Max, (ns)
-
Pd, (w)
140
Rthjc, Max, (k/w)
1.06
Package Style
ISOPLUS220™
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
200
180
160
140
120
100
300
250
200
150
100
100
80
60
40
20
50
0
0
3.5
0.4
0
0.5
f = 1 MHz
5
4
Fig. 9. Forward Voltage Drop of
0.6
10
T
Fig. 7. Input Admittance
4.5
J
Fig. 11. Capacitance
0.7
= 150ºC
T
- 40ºC
J
Intrinsic Diode
25ºC
= 150ºC
15
V
V
0.8
V
GS
SD
DS
5
- Volts
- Volts
- Volts
0.9
20
5.5
T
J
1
25
= 25ºC
C iss
C oss
C rss
1.1
6
30
1.2
6.5
35
1.3
1.4
40
7
10.00
1.00
0.10
0.01
140
120
100
10
80
60
40
20
0.0001
9
8
7
6
5
4
3
2
1
0
0
0
0
V
I
I
D
G
20
DS
= 25A
= 10mA
20
Fig. 12. Maxim um Transient Therm al
= 50V
0.001
40
Fig. 8. Transconductance
60
40
Q
Pulse W idth - Seconds
Fig. 10. Gate Charge
G
80
- NanoCoulombs
I
0.01
D
Im pedance
- Amperes
60
100
T
120
J
= - 40ºC
80
0.1
IXTC160N10T
150ºC
25ºC
140
100
160
1
180
120
200
140
10
220

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