IXTV200N10TS IXYS, IXTV200N10TS Datasheet
IXTV200N10TS
Specifications of IXTV200N10TS
Related parts for IXTV200N10TS
IXTV200N10TS Summary of contents
Page 1
... GSS DSS DS DSS 10V 50A, Notes 1, 2 DS(on © 2008 IXYS CORPORATION, All rights reserved IXTV200N10T IXTV200N10TS Maximum Ratings 100 = 1MΩ 100 GS ± 30 200 75 500 JM 40 1.5 550 -55 ... +175 175 -55 ... +175 300 260 11.65 / 2.5..14.6 4 Characteristic Values Min. Typ. 100 2 ...
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... DSS D 47 0.21 Characteristic Values Min. Typ 205 5.4 Kelvin test contact DS(on) 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTV200N10T IXTV200N10TS PLUS220 (IXTV) Outline Max 0.27 °C/W °C/W Max. 200 A 500 A PLUS220SMD (IXTV_S) Outline 1 6,404,065 B1 ...
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... Junction Temperature 2.8 2 10V GS 2.4 2.2 2.0 1 200A D 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 - Degrees Centigrade J Fig. 6. Drain Current vs. Case Temperature 90 External Lead Current Limit -50 - Degrees Centigrade C IXTV200N10T IXTV200N10TS 100A Value 100A D 100 125 150 175 100 125 150 175 ...
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... T = 25º 0.9 1.0 1.1 1.2 0 1.00 C iss 0.10 C oss C rss 0. 0.0001 IXTV200N10T IXTV200N10TS Fig. 8. Transconductance 40ºC J 25ºC 150º 100 125 150 175 I - Amperes D Fig. 10. Gate Charge V = 50V 25A 10mA 100 120 Q - NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0 ...
Page 5
... 25A 50A Degrees Centigrade J Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance d(off 125º 10V 50V 25A Ohms G IXTV200N10T IXTV200N10TS T = 25º 125º 105 115 125 300 275 250 225 200 175 150 I = 50A D 125 100 IXYS REF: T_200N10T(6V)9-30-08-D ...