IXTV200N10TS IXYS, IXTV200N10TS Datasheet

MOSFET N-CH 100V 200A PLUS220SMD

IXTV200N10TS

Manufacturer Part Number
IXTV200N10TS
Description
MOSFET N-CH 100V 200A PLUS220SMD
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet

Specifications of IXTV200N10TS

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.5 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
200A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
152nC @ 10V
Input Capacitance (ciss) @ Vds
9400pF @ 25V
Power - Max
550W
Mounting Type
Surface Mount
Package / Case
PLUS-220SMD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0055 Ohms
Drain-source Breakdown Voltage
100 V
Continuous Drain Current
200 A
Power Dissipation
550 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
200
Rds(on), Max, Tj=25°c, (?)
0.0055
Ciss, Typ, (pf)
9400
Qg, Typ, (nc)
152
Trr, Typ, (ns)
76
Trr, Max, (ns)
-
Pd, (w)
550
Rthjc, Max, (k/w)
0.27
Package Style
PLUS220 SMD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTV200N10TS
Manufacturer:
IXYS
Quantity:
236
TrenchMV
MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
I
I
I
I
E
P
T
T
T
T
F
Weight
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
DM
A
D25
LRMS
GSS
DSS
J
JM
stg
L
C
DSS
DGR
GSM
AS
D
GS(th)
DS(on)
J
DSS
= 25°C unless otherwise specified)
Test Conditions
T
T
Transient
T
Lead Current Limit, RMS
T
T
T
T
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
Mounting force (PLUS220)
PLUS220 types
V
V
V
V
V
V
Test Conditions
C
C
C
C
C
J
J
GS
DS
GS
DS
GS
GS
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
= 0V, I
= V
= ± 20V, V
= V
= 0V
= 10V, I
TM
GS
DSS
Power
, I
D
D
D
= 250μA
= 250μA
= 50A, Notes 1, 2
DS
= 0V
GS
= 1MΩ
T
J
= 150°C
JM
IXTV200N10T
IXTV200N10TS
11.65 / 2.5..14.6
-55 ... +175
100
-55 ... +175
2.5
Min.
Maximum Ratings
Characteristic Values
± 30
175
300
260
100
100
200
500
550
1.5
Typ.
75
40
4.5
4
±200 nA
250
Max.
4.5
5.5 mΩ
5
N/lb.
μA
μA
°C
°C
°C
°C
°C
W
V
V
V
A
A
A
A
V
V
g
J
V
I
R
PLUS220 (IXFV)
PLUS220SMD (IXFV_S)
G = Gate
S = Source
Features
Advantages
Applications
D25
International standard packages
175°C Operating Temperature
Avalanche Rated
Low R
Easy to mount
Space savings
High power density
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
High Current Switching Applications
DC/DC Converters and Off-line UPS
DS(on)
Primary - Side Switch
DSS
DS(on)
G
D
G
= 100V
= 200A
≤ ≤ ≤ ≤ ≤
S
S
D
TAB = Drain
5.5mΩ Ω Ω Ω Ω
= Drain
D (TAB)
D (TAB)
DS99714A(10/08)

IXTV200N10TS Summary of contents

Page 1

... GSS DSS DS DSS 10V 50A, Notes 1, 2 DS(on © 2008 IXYS CORPORATION, All rights reserved IXTV200N10T IXTV200N10TS Maximum Ratings 100 = 1MΩ 100 GS ± 30 200 75 500 JM 40 1.5 550 -55 ... +175 175 -55 ... +175 300 260 11.65 / 2.5..14.6 4 Characteristic Values Min. Typ. 100 2 ...

Page 2

... DSS D 47 0.21 Characteristic Values Min. Typ 205 5.4 Kelvin test contact DS(on) 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTV200N10T IXTV200N10TS PLUS220 (IXTV) Outline Max 0.27 °C/W °C/W Max. 200 A 500 A PLUS220SMD (IXTV_S) Outline 1 6,404,065 B1 ...

Page 3

... Junction Temperature 2.8 2 10V GS 2.4 2.2 2.0 1 200A D 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 - Degrees Centigrade J Fig. 6. Drain Current vs. Case Temperature 90 External Lead Current Limit -50 - Degrees Centigrade C IXTV200N10T IXTV200N10TS 100A Value 100A D 100 125 150 175 100 125 150 175 ...

Page 4

... T = 25º 0.9 1.0 1.1 1.2 0 1.00 C iss 0.10 C oss C rss 0. 0.0001 IXTV200N10T IXTV200N10TS Fig. 8. Transconductance 40ºC J 25ºC 150º 100 125 150 175 I - Amperes D Fig. 10. Gate Charge V = 50V 25A 10mA 100 120 Q - NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0 ...

Page 5

... 25A 50A Degrees Centigrade J Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance d(off 125º 10V 50V 25A Ohms G IXTV200N10T IXTV200N10TS T = 25º 125º 105 115 125 300 275 250 225 200 175 150 I = 50A D 125 100 IXYS REF: T_200N10T(6V)9-30-08-D ...

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