IXTH30N60P IXYS, IXTH30N60P Datasheet - Page 4

MOSFET N-CH 600V 30A TO-247

IXTH30N60P

Manufacturer Part Number
IXTH30N60P
Description
MOSFET N-CH 600V 30A TO-247
Manufacturer
IXYS
Series
PolarHV™r
Datasheet

Specifications of IXTH30N60P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
240 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
82nC @ 10V
Input Capacitance (ciss) @ Vds
5050pF @ 25V
Power - Max
540W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.24 Ohms
Forward Transconductance Gfs (max / Min)
25 s
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
30 A
Power Dissipation
540 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
30
Rds(on), Max, Tj=25°c, (?)
0.24
Ciss, Typ, (pf)
5050
Qg, Typ, (nc)
82
Trr, Typ, (ns)
500
Pd, (w)
540
Rthjc, Max, (k/w)
0.23
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTH30N60P
Manufacturer:
IXYS
Quantity:
5 000
Part Number:
IXTH30N60P
Manufacturer:
IXYS
Quantity:
35 500
IXYS reserves the right to change limits, test conditions, and dimensions.
10000
1000
100
90
80
70
60
50
40
30
20
10
10
0
0.4
0
f = 1MH z
0.5
5
Fig. 11. Capacitance
Fig. 9. Source Curre nt vs .
Source -To-Drain V oltage
1.00
0.10
0.01
10
T
J
0.6
= 125
0.1
V
15
V
º
S D
0.7
D S
C
- V olts
20
- V olts
0.8
25
T
Fig. 13. Maximum Transient Thermal Resistance
J
0.9
= 25
30
1
C iss
C oss
C rss
º
C
1
35
1.1
40
Pulse Width - milliseconds
IXTH 30N60P IXTQ 30N60P IXTT 30N60P
10
100
10
10
1
9
8
7
6
5
4
3
2
1
0
10
0
R
T
T
V
I
I
DS(on)
D
G
IXTV 30N60P IXTV 30N60PS
J
C
DS
20
= 15A
= 10m A
= 150ºC
= 25ºC
= 300V
Lim it
Fig. 10. Gate Charge
Fig. 12. Forw ard-Bias
40
Safe Ope rating Are a
Q
100
G
60
- nanoCoulombs
V
D S
100
80
D C
- V olts
100
10m s
120
1000
1m s
140
100µs
25µs
1000
160

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