IXTR36P15P IXYS, IXTR36P15P Datasheet
IXTR36P15P
Manufacturer Part Number
IXTR36P15P
Description
MOSFET P-CH 150V 22A ISOPLUS247
Manufacturer
IXYS
Series
PolarHT™r
Datasheet
1.IXTC36P15P.pdf
(2 pages)
Specifications of IXTR36P15P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
120 mOhm @ 18A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
22A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
55nC @ 10V
Input Capacitance (ciss) @ Vds
2950pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Vdss, Max, (v)
-150
Id(cont), Tc=25°c, (a)
-22
Rds(on), Max, Tj=25°c, (?)
0.12
Ciss, Typ, (pf)
2950
Qg, Typ, (nc)
55
Trr, Typ, (ns)
150
Pd, (w)
150
Rthjc, Max, (k/w)
1
Package Style
ISOPLUS-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PolarHT
MOSFET
(Electrically Isolated Tab)
P-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
V
F
Weight
Symbol
(T
BV
V
I
I
R
© 2007 IXYS CORPORATION, All rights reserved
DM
D25
AR
GSS
DSS
C
JM
L
GSM
AR
J
stg
GS(th)
DSS
DGR
GS
AS
D
ISOL
DS(on)
J
DSS
= 25°C unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, t = 1, leads-to-tab
Mounting force
Test Conditions
V
V
V
V
V
V
S
C
C
C
C
C
C
GS
GS
GS
J
J
J
DS
DS
GS
= 25°C to 175°C
= 25°C to 175°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 175°C, R
= 25°C
TM
= 0 V, I
= V
= ± 20 V, V
= V
= 0 V
= -10 V, I
DM
, di/dt ≤ 100 A/μs, V
GS
DSS
Power
, I
D
D
= -250 μA
= -250 μA
D
G
= I
DS
= 5 Ω
= 0 V
T
, (Note 1)
ISOPLUS220
ISOPLUS247
ISOPLUS220
ISOPLUS247
GS
Advance Technical Information
= 1 MΩ
DD
T
≤ V
J
= 150°C
DSS
,
JM
ISOPLUS220 (IXTC)
IXTC36P15P
IXTR36P15P
- 150
20..120 / 4.5..25
- 3.0
Min. Typ.
G
11..65 / 2.5..15
E153432
D
Characteristic Values
S
-55 ... +175
-55 ... +175
Maximum Ratings
Isolated back surface
- 150
- 150
- 100
2500
± 20
± 30
- 22
- 36
150
175
300
1.5
30
10
± 100
3
5
- 250
- 5.0
- 10
120
Max.
V/ns
N/lb
N/lb
m Ω
V~
mJ
°C
°C
°C
°C
nA
μA
μA
W
V
V
V
V
A
A
A
g
g
V
V
J
Features:
Applications:
Advantages:
drive
ISOPLUS247 (IXTR)
Silicon chip on Direct-Copper Bond
(DCB) substrate
Dynamic dv/dt rating
Avalanche rated
Fast intrinsic diode
The rugged PolarHT
Low Q
Low Drain-to-Tab capacitance
Low package inductance
- easy to drive and to protect
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC Choppers
AC motor control
Uninterrupted power supplies
High speed power switching
applications
Low gate charge results in simple
Improved Gate, Avalanche and
dynamic dv/dt ruggedness
High power density
Low collector capacitance to ground
Fast switching
Easy of paralleling
V
I
R
G
D25
- International standard isolated
- Isolated mounting surface
- 2500V electrical isolation
DSS
and UL recognized package
DS(on)
D
G = Gate
S = Source
E153432
G
S
= -150
= -22
≤ ≤ ≤ ≤ ≤
Isolated back surface
requirement
120 mΩ Ω Ω Ω Ω
D = Drain
TAB = Drain
TM
process
DS99792(02/07)
A
V
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IXTR36P15P Summary of contents
Page 1
... D = ± GSS DSS DS DSS - (Note 1) DS(on © 2007 IXYS CORPORATION, All rights reserved Advance Technical Information IXTC36P15P IXTR36P15P ISOPLUS220 (IXTC) E153432 Isolated back surface Maximum Ratings - 150 = 1 MΩ - 150 GS ± 20 ± 100 1.5 ≤ DSS 150 -55 ... +175 175 -55 ... +175 300 2500 11 ...
Page 2
... Characteristic Values T = 25°C unless otherwise specified) J Min. Typ. Max. - 100 150 2.0 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTC36P15P IXTR36P15P ISOPLUS220 TM (IXTC) Outline Note Bottom heatsink (Pin 4) is electrically isolated from Pin nC 1, °C/W °C ...