IXTF200N10T IXYS, IXTF200N10T Datasheet
IXTF200N10T
Specifications of IXTF200N10T
Related parts for IXTF200N10T
IXTF200N10T Summary of contents
Page 1
... GSS DSS DS DSS 10V 50A, Notes 1 DS(on © 2009 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXTF200N10T Maximum Ratings 100 = 1MΩ 100 GS ± 500 JM 40 1.5 156 -55 ... +175 175 -55 ... +175 300 260 < 1mA, RMS 2500 ISOL 120..120 / 4.5..27 ...
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... I = 50A 47 DSS D 47 0.21 Characteristic Values Min. Typ 205 5.4 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTF200N10T ISOPLUS i4-Pak Max. (IXTF) Outline 0.96 °C/W °C/W Max. 200 A 500 A 1 All leads and tab are tin plated. ...
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... DS(on) vs. Drain Current 3 10V 2.8 GS 15V - - - - 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 120 160 I - Amperes D © 2009 IXYS CORPORATION, All Rights Reserved 0.7 0.8 0.9 1.0 1.1 1 10V 1.2 1.4 1.6 1.8 2.0 2.2 = 100A Value D 100 ...
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... T = 25º 0.9 1.0 1.1 1.2 0 1.00 C iss 0.10 C oss C rss 0. 0.0001 IXTF200N10T Fig. 8. Transconductance 40ºC J 25ºC 150º 100 125 150 175 I - Amperes D Fig. 10. Gate Charge V = 50V 25A 10mA 100 120 Q - NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0 ...
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... I = 50A D 120 100 Ohms G Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 125º 25º 25º 125º Amperes D © 2009 IXYS CORPORATION, All Rights Reserved R = 3.3Ω 10V 50V 105 115 125 25A 200 d(off) 180 3.3Ω 10V G ...