IXFV18N90PS IXYS, IXFV18N90PS Datasheet - Page 2

• Manufacturer Part Number: IXFV18N90PS
• Description: MOSFET N-CH 900V 18A PLUS220SMD
• Manufacturer: IXYS
• Series: Polar™r
• Type: Polar Power MOSFETr

Specifications of IXFV18N90PS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 6V @ 1mA
• Gate Charge (qg) @ Vgs: 97nC @ 10V
• Input Capacitance (ciss) @ Vds: 5230pF @ 25V
• Power - Max: 540W
• Mounting Type: Surface Mount
• Package / Case: PLUS-220SMD
• Product: MOSFET Gate Drivers
• Rise Time: 33 ns
• Fall Time: 44 ns
• Supply Current: 9 A
• Maximum Power Dissipation: 540 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Maximum Turn-off Delay Time: 60 ns
• Maximum Turn-on Delay Time: 40 ns
• Minimum Operating Temperature: - 55 C
• Number Of Drivers: Single
• Number Of Outputs: 1
• Output Current: 18 A
• Output Voltage: 900 V
• Vdss, Max, (v): 900
• Id(cont), Tc=25°c, (a): 18
• Rds(on), Max, Tj=25°c, (?): 0.6
• Ciss, Typ, (pf): 5230
• Qg, Typ, (nc): 97
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 540
• Rthjc, Max, (ºc/w): 0.23
• Package Style: PLUS220SMD
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
R
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
T
I
I
V
t
Q
I
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
J
SD
Gi
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
= 25°C Unless Otherwise Specified)
= 25°C Unless Otherwise Specified)
Resistive Switching Times
V
R
I
V
Test Conditions
V
Gate Input Resistance
V
V
(TO-247, PLUS220)
V
Repetitive, Pulse Width Limited by T
I
F
F
GS
R
DS
GS
G
GS
GS
= 9A, -di/dt = 100A/μs
= I
= 100V, V
= 10V, V
= 2Ω (External)
= 0V
= 20V, I
= 10V, V
S
= 0V, V
, V
GS
= 0V, Note 1
D
DS
DS
GS
DS
= 0.5 • I
= 0.5 • V
= 25V, f = 1MHz
= 0V
4,835,592
4,881,106
= 0.5 • V
D25
DSS
, Note 1
4,931,844
5,017,508
5,034,796
DSS
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
Min.
6
Min.
Characteristic Values
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
5230
10.8
Typ.
0.25
Typ.
366
1.0
1.2
10
53
40
97
30
40
33
60
44
0.23 °C/W
6,404,065 B1
6,534,343
6,583,505
Max.
300 ns
Max.
1.5
18
72
°C/W
nC
nC
nC
μC
pF
pF
pF
ns
ns
ns
ns
Ω
S
A
A
V
A
IXFH18N90P IXFV18N90P
IXFT18N90P IXFV18N90PS
6,683,344
6,710,405 B2 6,759,692
6,710,463
6,727,585
6,771,478 B2 7,071,537
7,005,734 B2
7,063,975 B2
7,157,338B2