IXTR90P10P IXYS, IXTR90P10P Datasheet

MOSFET P-CH 100V 57A ISOPLUS247

IXTR90P10P

Manufacturer Part Number
IXTR90P10P
Description
MOSFET P-CH 100V 57A ISOPLUS247
Manufacturer
IXYS
Series
PolarP™r
Datasheet

Specifications of IXTR90P10P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
27 mOhm @ 45A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
57A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
120nC @ 10V
Input Capacitance (ciss) @ Vds
5800pF @ 25V
Power - Max
190W
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Vdss, Max, (v)
-100.0
Id(cont), Tc=25°c, (a)
-57.0
Rds(on), Max, Tj=25°c, (?)
0.027
Ciss, Typ, (pf)
5800
Qg, Typ, (nc)
120
Trr, Typ, (ns)
144
Pd, (w)
190
Rthjc, Max, (k/w)
0.66
Package Style
ISOPLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PolarP
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
R
© 2009 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
TM
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, RMS
I
Mounting Force
V
V
V
V
V
Test Conditions
S
ISOL
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
≤ 1mA
= 0V, I
= V
= ±20V, V
= V
= -10V, I
DM
GS
, V
DSS
, I
DD
D
, V
D
= - 250µA
D
≤ V
= - 250µA
GS
DS
= - 45A, Note 1
= 0V
DSS
= 0V
, T
t = 1min
t = 1s
J
GS
≤ 150°C
= 1MΩ
T
J
= 125°C
JM
IXTR90P10P
20..120 / 4.5..27
- 2.0
-100
Min.
-55 ... +150
-55 ... +150
Characteristic Values
Maximum Ratings
- 100
- 100
- 225
2500
3000
Typ.
- 57
- 90
±20
±30
190
150
300
260
2.5
10
5
- 200 µA
±100 nA
- 4.0
- 25 µA
Max.
27 mΩ
N/lb.
V/ns
V~
V~
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
J
V
I
R
Features
Advantages
Applications
ISOPLUS247
G = Gate
S = Source
D25
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Avalanche Rated
High Current Handling Capability
Fast Intrinsic Diode
The Rugged PolarP
Low Q
Low Drain-to-Tab capacitance
Low Package Inductance
Easy to Mount
Space Savings
High Power Density
High-Side Switches
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
DSS
DS(on)
- UL Recognized Package
- Isolated Mounting Surface
- 2500V Electrical Isolation
E153432
G
≤ ≤ ≤ ≤ ≤
=
=
D = Drain
- 100V
- 57A
27mΩ Ω Ω Ω Ω
TM
Isolated Tab
DS99985A(03/09)
Process

Related parts for IXTR90P10P

IXTR90P10P Summary of contents

Page 1

... ±20V GSS DSS DS DSS -10V 45A, Note 1 DS(on © 2009 IXYS CORPORATION, All Rights Reserved IXTR90P10P Maximum Ratings - 100 = 1MΩ - 100 GS ±20 ± 225 2.5 ≤ 150° 190 -55 ... +150 150 -55 ... +150 300 260 2500 3000 20..120 / 4.5..27 5 Characteristic Values Min ...

Page 2

... D 60 120 , 45A 23 DSS D 60 0.15 Characteristic Values Min. Typ. JM 144 0.92 -12.8 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTR90P10P Max. ISOPLUS247 (IXTR) Outline 0.66 °C/W °C/W Max 360 µC A 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 ...

Page 3

... -2.5 -3.0 -3.5 -4 45A vs 125º 25ºC J -100 -120 -140 -160 -180 IXTR90P10P Fig. 2. Extended Output Characteristics @ 25ºC -240 V = -10V GS -220 -200 - 9V -180 -160 -140 -120 -100 -80 -60 -40 - -12 - Volts DS Fig Normalized to I DS(on) Junction Temperature 2 ...

Page 4

... T = 25º -2.5 -3.0 -3.5 -4.0 - 1,000 C iss - 100 C oss - 10 C rss - 1 -25 -30 -35 -40 IXTR90P10P Fig. 8. Transconductance -10 -20 -30 -40 -50 -60 - Amperes D Fig. 10. Gate Charge 50V 45A -1mA NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area 1ms R Limit DS(on) 10ms 100ms ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXTR90P10P 0.1 1 IXYS REF: T_90P10P(B7) 5-13-08 10 ...

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