IXTT40N50L2 IXYS, IXTT40N50L2 Datasheet - Page 4

• Manufacturer Part Number: IXTT40N50L2
• Description: MOSFET N-CH 40A 500V TO-268
• Manufacturer: IXYS
• Series: Linear L2™r

Specifications of IXTT40N50L2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 170 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 320nC @ 10V
• Input Capacitance (ciss) @ Vds: 10400pF @ 25V
• Power - Max: 540W
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 40
• Rds(on), Max, Tj=25°c, (?): 0.17
• Ciss, Typ, (pf): 10400
• Qg, Typ, (nc): 320
• Trr, Typ, (ns): 500
• Pd, (w): 540
• Rthjc, Max, (k/w): 0.23
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
1,000
100
120
110
100
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
3.5
0.4
0
4.0
f
= 1 MHz
5
0.5
4.5
Fig. 9. Forward Voltage Drop of
5.0
C rss
10
Fig. 7. Input Admittance
0.6
5.5
Fig. 11. Capacitance
T
J
= 125ºC
Intrinsic Diode
15
6.0
C oss
V
V
V
GS
DS
SD
0.7
6.5
C iss
- Volts
- Volts
- Volts
20
T
J
7.0
= 125ºC
0.8
- 40ºC
25ºC
7.5
25
T
8.0
J
0.9
= 25ºC
30
8.5
9.0
1.0
35
9.5 10.0
1.1
40
1.000
0.100
0.010
0.001
0.00001
36
33
30
27
24
21
18
15
12
16
14
12
10
9
6
3
0
8
6
4
2
0
0
0
V
I
I
D
G
DS
50
= 20A
= 10mA
Fig. 12. Maximum Transient Thermal
0.0001
10
= 250V
IXTH40N50L2 IXTQ40N50L2
100
Fig. 8. Transconductance
20
Fig. 10. Gate Charge
0.001
Q
150
Pulse Width - Seconds
G
- NanoCoulombs
I
D
Impedance
30
- Amperes
200
0.01
40
250
IXTT40N50L2
300
0.1
T
50
J
= - 40ºC
350
60
125ºC
1
25ºC
400
70
450
10