IXFH14N100Q2 IXYS, IXFH14N100Q2 Datasheet - Page 4

MOSFET N-CH 1000V 14A TO-247AD

IXFH14N100Q2

Manufacturer Part Number
IXFH14N100Q2
Description
MOSFET N-CH 1000V 14A TO-247AD
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFH14N100Q2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
950 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
5.5V @ 4mA
Gate Charge (qg) @ Vgs
83nC @ 10V
Input Capacitance (ciss) @ Vds
2800pF @ 25V
Power - Max
500W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.9 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
14 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
14
Rds(on), Max, Tj=25°c, (?)
0.95
Ciss, Typ, (pf)
2800
Qg, Typ, (nc)
83
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
500
Rthjc, Max, (ºc/w)
0.25
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFH14N100Q2
Manufacturer:
IXYS
Quantity:
15 500
IXYS reserves the right to change limits, test conditions, and dimensions.
1 0000
1 000
1 00
45
40
35
30
25
20
1 0
1 5
1 0
20
1 8
1 6
1 4
1 2
1 0
5
0
8
6
4
2
0
0.3
4.0
0
Fig. 9. Source Current vs. Source-To-Drain
f
= 1 MHz
0.4
5
4.5
0.5
Fig. 7. Input Admittance
1 0
0.6
Fig. 11. Capacitance
5.0
T
J
T
1 5
= 1 25
V
V
J
0.7
V
Voltage
= 1 25
SD
GS
- 40
DS
25
º
- Volts
- Volts
C
0.8
20
- Volts
º
º
5.5
º
C
C
C
0.9
25
6.0
1 .0
T
C
C
C
J
30
iss
oss
rss
= 25
1 .1
6.5
º
C
35
1 .2
40
7.0
1 .3
0.001
0.01
0.1
28
24
20
1 6
1 2
1 0
8
4
0
9
8
7
6
5
4
3
2
0
1
1
0.01
0
0
Fig. 12. Maximum Transient Thermal
1 0
V
I
I
D
G
4
DS
= 7A
= 1 0mA
0.1
= 500V
20
Pulse Width - milliseconds
Fig. 8. Transconductance
Fig. 10. Gate Charge
8
Q
30
Impedance
G
I
- nanoCoulombs
D
1
1 2
IXFH14N100Q2
- Amperes
40
50
T
1 6
1 25
J
1 0
IXYS REF: F_14N100Q2 (7F)5-28-08-B
= - 40
º
25
C
60
º
C
20
º
C
70
1 00
24
80
1 000
28
90

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