IXTR40P50P IXYS, IXTR40P50P Datasheet - Page 4

MOSFET P-CH 500V 22A ISOPLUS247

IXTR40P50P

Manufacturer Part Number
IXTR40P50P
Description
MOSFET P-CH 500V 22A ISOPLUS247
Manufacturer
IXYS
Series
PolarP™r
Datasheet

Specifications of IXTR40P50P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
260 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
22A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
205nC @ 10V
Input Capacitance (ciss) @ Vds
11500pF @ 25V
Power - Max
312W
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Vdss, Max, (v)
-500.0
Id(cont), Tc=25°c, (a)
-22.0
Rds(on), Max, Tj=25°c, (?)
0.260
Ciss, Typ, (pf)
11500
Qg, Typ, (nc)
205
Trr, Typ, (ns)
477
Pd, (w)
312
Rthjc, Max, (k/w)
0.40
Package Style
ISOPLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
-140
-120
-100
1,000
-70
-60
-50
-40
-30
-20
-10
-80
-60
-40
-20
100
0
10
0
-3.5
-0.5
0
f = 1 MHz
-1.0
-5
-4.0
Fig. 9. Forward Voltage Drop of
Fig. 7. Input Admittance
-10
-1.5
Fig. 11. Capacitance
-4.5
Intrinsic Diode
-15
T
V
J
V
-2.0
V
DS
= 125ºC
GS
SD
T
J
- Volts
-5.0
= 125ºC
- Volts
- Volts
-20
- 40ºC
25ºC
-2.5
-25
-5.5
-3.0
T
J
C iss
C oss
C rss
-30
= 25ºC
-6.0
-3.5
-35
-6.5
-4.0
-40
-
1,000.0
-
100.0
-
-
10.0
-
-10
1.0
0.1
70
60
50
40
30
20
10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0
-
10
0
0
Fig. 12. Forward-Bias Safe Operating Area
-5
R
T
T
Single Pulse
V
I
I
20
DS(on)
D
G
DS
J
C
= 150ºC
-10
= - 20A
= -1mA
= 25ºC
= - 250V
40
Limit
-15
Fig. 8. Transconductance
60
-20
Fig. 10. Gate Charge
-25
Q
80
I
D
G
V
- Amperes
-30
- NanoCoulombs
DS
100
- Volts
-
-35
100
120
IXTR40P50P
-40
DC
140
-45
-50
160
T
J
= - 40ºC
-55
125ºC
180
25ºC
-60
100µs
200
25µs
10ms
100ms
1ms
-65
-
220
1000
-70

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