IXTR32P60P IXYS, IXTR32P60P Datasheet

MOSFET P-CH 600V 18A ISOPLUS247

IXTR32P60P

Manufacturer Part Number
IXTR32P60P
Description
MOSFET P-CH 600V 18A ISOPLUS247
Manufacturer
IXYS
Series
PolarP™r
Datasheet

Specifications of IXTR32P60P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
385 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
196nC @ 10V
Input Capacitance (ciss) @ Vds
11100pF @ 25V
Power - Max
310W
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Vdss, Max, (v)
-600
Id(cont), Tc=25°c, (a)
-18
Rds(on), Max, Tj=25°c, (?)
0.385
Ciss, Typ, (pf)
11100
Qg, Typ, (nc)
196
Trr, Typ, (ns)
480
Pd, (w)
310
Rthjc, Max, (k/w)
0.40
Package Style
ISOPLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PolarP
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
50/60 Hz, RMS
I
Mounting force
V
V
V
V
V
V
Test Conditions
S
ISOL
TM
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
≤ 1mA
= 0V, I
= V
= ±20V, V
= V
= 0V
= -10V, I
DM
GS
, V
DSS
, I
DD
D
D
= - 250μA
D
≤ V
= - 250μA
DS
= -16A, Note 1
DSS
= 0V
, T
J
GS
≤ 150°C
= 1MΩ
Preliminary Technical Information
t = 1min
t = 1s
T
J
JM
= 125°C
IXTR32P60P
20..120/4.5..27
-55 ... +150
-55 ... +150
- 500
- 2.5
Maximum Ratings
Characteristic Values
Min.
- 600
- 600
2500
3000
- 90
- 32
±20
±30
310
150
300
260
-18
3.5
10
Typ.
5
- 250 μA
±100 nA
- 4.5
- 50 μA
385 mΩ
Max.
N/lb.
V/ns
V~
V~
°C
°C
°C
°C
°C
W
V
V
V
V
V
A
A
A
V
g
J
V
I
R
Features
Applications
ISOPLUS247 (IXTR)
G = Gate
S = Source
D25
Silicon chip on Direct-Copper Bond
(DCB) substrate
Avalanche rated
The rugged PolarP
Low Q
Low Drain-to-Tab capacitance
Low package inductance
- easy to drive and to protect
High side switching
Push-pull amplifiers
DC Choppers
Automatic test equipment
Load-Switch Application
Fuel Injection Systems
DS(on)
DSS
- UL recognized package
- Isolated mounting surface
- 2500V electrical isolation
E153432
G
≤ ≤ ≤ ≤ ≤
=
=
D = Drain
- 600V
- 18A
TM
385mΩ Ω Ω Ω Ω
Isolated Tab
process
DS99992(05/08)

Related parts for IXTR32P60P

IXTR32P60P Summary of contents

Page 1

... ±20V GSS DSS DS DSS -10V -16A, Note 1 DS(on © 2008 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXTR32P60P Maximum Ratings - 600 = 1MΩ - 600 GS ±20 ±30 - 3.5 ≤ 150° 310 -55 ... +150 150 -55 ... +150 300 260 t = 1min 2500 3000 20..120/4.5..27 5 Characteristic Values Min ...

Page 2

... I = -16A 54 DSS D 58 0.15 Characteristic Values Min. Typ. JM 480 11.4 - 47.6 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTR32P60P Max. ISOPLUS247 (IXTR) Outline 0.40 °C/W °C/W Max 128 μC A 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 ...

Page 3

... D -20 - 125ºC J -16 -14 -12 - 25º -40 -50 -60 -70 IXTR32P60P Fig. 2. Extended Output Characteristics @ 25º -10V -12 -15 - Volts DS Fig Normalized to I DS(on) Junction Temperature V = -10V 32A D -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. ...

Page 4

... V DS IXYS reserves the right to change limits, test conditions, and dimensions. -5.0 -5.5 -6 25ºC J -2.4 -2.8 -3.2 -3.6 - Volts - 100.0 C iss 10 oss 1 rss 0.1 - -25 -30 -35 -40 - Volts IXTR32P60P Fig. 8. Transconductance -10 -15 -20 -25 - Amperes D Fig. 10. Gate Charge - 300V - -16A -1mA ...

Page 5

... IXYS CORPORATION, All rights reserved Fig. 13. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXTR32P60P 0.1 1 IXYS REF: T_32P60P(B9) 6-03-08 10 ...

Related keywords