IXTR170P10P IXYS, IXTR170P10P Datasheet

MOSFET P-CH 100V 108A ISOPLUS247

IXTR170P10P

Manufacturer Part Number
IXTR170P10P
Description
MOSFET P-CH 100V 108A ISOPLUS247
Manufacturer
IXYS
Series
PolarP™r
Datasheet

Specifications of IXTR170P10P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
13 mOhm @ 85A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
108A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
240nC @ 10V
Input Capacitance (ciss) @ Vds
12600pF @ 25V
Power - Max
312W
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Vdss, Max, (v)
-100
Id(cont), Tc=25°c, (a)
-108
Rds(on), Max, Tj=25°c, (?)
0.013
Ciss, Typ, (pf)
12600
Qg, Typ, (nc)
240
Trr, Typ, (ns)
176
Pd, (w)
312
Rthjc, Max, (k/w)
0.4
Package Style
ISOPLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PolarP
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
V
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2009 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
TM
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
50/60 Hz, RMS
I
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Force
V
V
V
V
V
Test Conditions
S
ISOL
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
≤ 1mA
= 0V, I
= V
= ±20V, V
= V
= -10V, I
DM
GS
, V
DSS,
, I
DD
D
D
V
= - 250µA
D
≤ V
= -1mA
GS
DS
= - 85A, Note 1
= 0V
DSS
= 0V
, T
t = 1 minute
t = 1 second
J
GS
≤ 150°C
= 1MΩ
T
J
= 125°C
JM
IXTR170P10P
20..120 / 4.5..27
- 2.0
-100
Min.
-55 ... +150
-55 ... +150
Maximum Ratings
Characteristic Values
- 510
2500
3000
-100
-100
-108
-170
±20
±30
312
150
300
260
Typ.
3.5
10
6
- 250 µA
±100 nA
- 4.0
Max.
- 50 µA
13 mΩ
N/lb.
V/ns
V~
V~
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
J
V
I
R
Features
Advantages
Applications
ISOPLUS247
G = Gate
S = Source
D25
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Dynamic dv/dt Rating
High Current Handling Capability
Avalanche Rated
Fast Intrinsic Diode
The Rugged PolarP
Low Q
Low Drain-to-Tab Capacitance
Low Package Inductance
Easy to Mount
Space Savings
High Power Density
High-Side Switches
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
DS(on)
DSS
- UL Recognized Package
- Isolated Mounting Surface
- 2500V Electrical Isolation
E153432
G
≤ ≤ ≤ ≤ ≤
=
=
D = Drain
-100V
-108A
13mΩ Ω Ω Ω Ω
TM
Isolated Tab
Process
DS99976A(03/09)

Related parts for IXTR170P10P

IXTR170P10P Summary of contents

Page 1

... ±20V GSS DSS DS DSS -10V 85A, Note 1 DS(on © 2009 IXYS CORPORATION, All Rights Reserved IXTR170P10P Maximum Ratings -100 = 1MΩ -100 GS ±20 ±30 -108 - 510 JM -170 3.5 ≤ 150° 312 -55 ... +150 150 -55 ... +150 2500 3000 300 260 20..120 / 4.5..27 6 Characteristic Values Min ...

Page 2

... 85A 45 DSS D 120 0.15 Characteristic Values Min. Typ. JM 176 1.25 -14.2 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTR170P10P Max. ISOPLUS247 (IXTR) Outline 0.40 °C/W °C/W Max. -170 A - 680 µC A 6,404,065 B1 6,683,344 6,727,585 ...

Page 3

... D -120 -110 -100 T = 125ºC J -90 -80 -70 -60 -50 -40 - 25ºC J -20 -10 -160 -200 -240 -280 IXTR170P10P Fig. 2. Extended Output Characteristics @ 25º -15V -10V - Volts DS Fig Normalized to I DS(on) Junction Temperature V = -10V -170A D -50 ...

Page 4

... T = 25º -3.0 -3.5 -4.0 -4.5 - 1,000 C iss - 100 C oss rss - -25 -30 -35 -40 IXTR170P10P Fig. 8. Transconductance -20 -40 -60 -80 -100 I - Amperes D Fig. 10. Gate Charge 50V 85A -1mA 100 120 140 160 180 Q - NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area 1ms R Limit DS(on) 10ms ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXTR170P10P 0.1 1 IXYS REF: T_170P10P(B9)3-25-09-C 10 ...

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