IXTR90P20P IXYS, IXTR90P20P Datasheet

MOSFET P-CH 200V 53A ISOPLUS247

IXTR90P20P

Manufacturer Part Number
IXTR90P20P
Description
MOSFET P-CH 200V 53A ISOPLUS247
Manufacturer
IXYS
Series
PolarP™r
Datasheet

Specifications of IXTR90P20P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
48 mOhm @ 45A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
53A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
205nC @ 10V
Input Capacitance (ciss) @ Vds
12000pF @ 25V
Power - Max
312W
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Vdss, Max, (v)
-200.0
Id(cont), Tc=25°c, (a)
-53.0
Rds(on), Max, Tj=25°c, (?)
0.048
Ciss, Typ, (pf)
12000
Qg, Typ, (nc)
205
Trr, Typ, (ns)
315
Pd, (w)
312
Rthjc, Max, (k/w)
0.40
Package Style
ISOPLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PolarP
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
V
I
M
Weight
Symbol
(T
BV
V
I
I
R
© 2009 IXYS CORPORATION, All Rights Reserved
D25
DM
A
ISOL
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
TM
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 H
≤ 1mA t = 1s
Mounting Force
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±20V, V
= V
= -10V, I
DM
Z
, V
GS
DSS
, RMS t = 1min
, I
DD
D
, V
D
= - 250μA
D
≤ V
= -1mA
GS
DS
= - 45A, Note 1
= 0V
DSS
= 0V
, T
J
GS
≤ 150°C
= 1MΩ
T
J
= 125°C
JM
IXTR90P20P
20..120/4.5..27
- 200
- 2.0
Characteristic Values
Min.
-55 ... +150
-55 ... +150
Maximum Ratings
2500
3000
- 200
- 200
- 270
- 53
- 90
±20
±30
312
150
300
260
3.5
Typ.
10
6
- 250 μA
±100 nA
- 4.0
Max.
- 50 μA
48 mΩ
N/lb.
V/ns
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
V
V
g
J
V
I
R
Features
Advantages
Applications
ISOPLUS247
G = Gate
S = Source
D25
Silicon chip on Direct-Copper Bond
(DCB) Substrate
Avalanche Rated
Fast Intrinsic Diode
The Rugged PolarP
Low Q
Low Drain-to-Tab Capacitance
Low Package Inductance
Easy to Mount
Space Savings
High Power Density
High-Side Switches
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
DS(on)
DSS
- UL Recognized Package
- Isolated Mounting Surface
- 2500V Electrical Isolation
E153432
G
≤ ≤ ≤ ≤ ≤
=
=
D = Drain
- 200V
- 53A
48mΩ Ω Ω Ω Ω
TM
Isolated Tab
DS99932B(03/09)
Process

Related parts for IXTR90P20P

IXTR90P20P Summary of contents

Page 1

... ±20V GSS DSS DS DSS -10V 45A, Note 1 DS(on © 2009 IXYS CORPORATION, All Rights Reserved IXTR90P20P Maximum Ratings - 200 = 1MΩ - 200 GS ±20 ± 270 3.5 ≤ 150° 312 -55 ... +150 150 -55 ... +150 300 260 2500 3000 20..120/4.5..27 6 Characteristic Values Min. ...

Page 2

... DSS 205 , 45A 45 DSS D 80 0.15 Characteristic Values Min. Typ. JM 315 6 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTR90P20P Max. ISOPLUS247 (IXTR) Outline 0.40 °C/W °C/W Max 360 μC A 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 ...

Page 3

... D -60 -55 - 125ºC J -45 -40 -35 -30 -25 -20 - 25ºC -10 J -150 -180 -210 -240 IXTR90P20P Fig. 2. Extended Output Characteristics @ 25º -10V - -60 - -12 -15 - Volts DS Fig Normalized to I DS(on) Junction Temperature 2 -10V 2.2 GS 2.0 1 90A D 1.6 1.4 1 ...

Page 4

... T = 25º -3.0 -3.5 -4.0 -4.5 - 1,000.0 C iss - 100.0 C oss - 10.0 - 1.0 C rss - 0.1 - -25 -30 -35 -40 IXTR90P20P Fig. 8. Transconductance -20 -40 -60 - Amperes D Fig. 10. Gate Charge V = -100V 45A -1mA 100 120 140 Q - NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area R Limit DS(on 150º 25ºC ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXTR90P20P 0.1 1 IXYS REF: T_90P20P(B9)03-25-09-D 10 ...

Related keywords