IXFK90N20 IXYS, IXFK90N20 Datasheet - Page 4

• Manufacturer Part Number: IXFK90N20
• Description: MOSFET N-CH 200V 90A TO-264AA
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFK90N20

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 23 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 4V @ 8mA
• Gate Charge (qg) @ Vgs: 380nC @ 10V
• Input Capacitance (ciss) @ Vds: 9000pF @ 25V
• Power - Max: 500W
• Mounting Type: Through Hole
• Package / Case: TO-264AA
• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 90
• Rds(on), Max, Tj=25°c, (?): 0.02
• Ciss, Typ, (pf): 9000
• Qg, Typ, (nc): 380
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 500
• Rthjc, Max, (ºc/w): 0.25
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.01
100
0.1
0.5
14
12
10
80
60
40
20
0.001
8
6
4
2
0
0
0.4
0
Fig.7 Gate Charge Characteristic Curve
Fig.9 Source Current vs. Source
Fig.10 Transient Thermal Impedance
V
I
I
D
G
DS
= 50A
= 10mA
50
= 100V
to Drain Voltage
Gate Charge - nCoulombs
100 150 200 250 300 350 400
0.6
T
J
= 125°C
V
SD
0.8
- Volts
T
J
= 25°C
1.0
0.01
1.2
Pulse Width - Seconds
IXFK100N20
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
Fig.8 Capacitance Curves
0
0.1
IXFN90N20
5
f = 1MHz
V
DS
= 25V
10
V
DS
- Volts
C
C
C
oss
iss
rss
15
IXFN106N20
20
25
1
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