IXFX55N50 IXYS, IXFX55N50 Datasheet - Page 3

• Manufacturer Part Number: IXFX55N50
• Description: MOSFET N-CH 500V 55A PLUS247
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFX55N50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 80 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 4.5V @ 8mA
• Gate Charge (qg) @ Vgs: 330nC @ 10V
• Input Capacitance (ciss) @ Vds: 9400pF @ 25V
• Power - Max: 520W
• Mounting Type: Through Hole
• Package / Case: PLUS247™-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.08 Ohms
• Forward Transconductance Gfs (max / Min): 45 s
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 55 A
• Power Dissipation: 560 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 55
• Rds(on), Max, Tj=25°c, (?): 0.08
• Ciss, Typ, (pf): 9400
• Qg, Typ, (nc): 330
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 568
• Rthjc, Max, (ºc/w): 0.22
• Package Style: PLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2002 IXYS All rights reserved
140
120
100
2.8
2.8
2.4
2.4
2.0
2.0
1.6
1.6
1.2
1.2
0.8
0.8
80
60
40
20
Figure 5. Drain Current vs. Case Temperature
60
60
50
50
40
40
30
30
20
20
10
10
0
0
0
-50
-50
0
0
0
Figure 1. Output Characteristics at 25
Figure 3. R
V
V
-25
-25
GS
GS
T
T
20
20
J
J
4
= 10V
= 10V
= 25
= 25
0
0
I
O
O
D25
C
C
DS(on)
40
40
8
T
T
T
I
I
value vs. I
D
D
25
25
J
C
C
V
= 25
IXF_50N50
- Amperes
- Amperes
- Degrees C
- Degrees C
DS
normalized to 0.5
T
T
O
- Volts
60
60
12
J
J
C
50
50
= 125
= 125
D
O
O
75
75
C
C
80
80
16
IXF_55N50
100 125 150
100 125 150
V
GS
100
100
= 10V
20
9V
8V
7V
6V
5V
O
C
120
120
24
100
100
Figure 6. Admittance Curves
80
60
40
20
80
60
40
20
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0
0
3.0
0
25
Figure 2. Output Characteristics at 125
Figure 4. R
T
V
V
J
= 125
GS
GS
3.5
= 10V
= 10V
4
O
50
C
I
D25
4.0
DS(on)
V
8
GS
T
V
value vs. T
V
J
= 10V
GS
75
T
DS
- Degrees C
normalized to 0.5
J
9V
8V
7V
= 125
I
4.5
- Volts
D
- Volts
12
= 55A
o
C
100
J
5.0
IXFX 50N50
IXFX 55N50
16
I
D
= 27.5A
T
T
125
5.5
J
J
20
= 25
= 25
6V
o
o
C
C
5V
O
6.0
C
24
150