2N7002E-T1-E3 Vishay, 2N7002E-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: 2N7002E-T1-E3
• Description: MOSFET N-CH 60V 240MA SOT-23
• Manufacturer: Vishay

Specifications of 2N7002E-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 Ohm @ 250mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 240mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 21pF @ 5V
• Power - Max: 350mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.24 A
• Power Dissipation: 350 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 240mA
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 3ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

2N7002E
Vishay Siliconix
Notes:
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: pulse width  300 µs duty cycle  2 %.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS (T
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Time
Turn-Off Time
a
a, c
b
b
A
b
= 25 °C, unless otherwise noted)
Symbol
R
V
I
t
t
I
C
I
DS(on)
C
V
GS(th)
D(on)
V
Q
C
Q
d(on)
d(off)
GSS
DSS
Q
g
oss
DS
SD
rss
iss
fs
gs
gd
g
I
D
V
DS
 250 mA, V
V
DS
= 60 V, V
V
V
V
V
V
V
V
V
I
= 5 V, V
GS
S
V
V
GS
DS
V
DS
DS
GS
GS
DS
DD
DS
= 200 mA, V
GS
Test Conditions
= 4.5 V, I
= 15 V, I
= 0 V, V
= 10 V, I
= 10 V, V
= V
= 10 V, V
= 4.5 V, V
= 60 V, V
I
= 10 V, R
= 0 V, I
D
GS
 250 mA
GS
GS
GEN
, I
= 0 V , T
= 0 V, f = 1 MHz
GS
D
D
D
D
D
= 10 V, R
GS
DS
DS
= 250 mA
= 250 µA
GS
= 200 mA
= 10 µA
= 200 mA
L
GS
= ± 15 V
= 40 
= 7.5 V
= 4.5 V
= 10 V
= 0 V
= 0 V
J
= 125 °C
g
= 10 
Min.
800
500
60
1
S11-0183-Rev. F, 07-Feb-11
Limits
Typ.
1300
0.85
0.06
0.06
700
600
Document Number: 70860
1.2
1.8
0.4
2.5
68
21
13
18
2
7
a
Max.
± 10
500
2.5
1.2
0.6
20
25
1
3
4
Unit
mA
mS
nC
nA
µA
pF
ns

V
V