2N7002E-T1-E3 Vishay, 2N7002E-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: 2N7002E-T1-E3
• Description: MOSFET N-CH 60V 240MA SOT-23
• Manufacturer: Vishay

Specifications of 2N7002E-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 Ohm @ 250mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 240mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 21pF @ 5V
• Power - Max: 350mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.24 A
• Power Dissipation: 350 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 240mA
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 3ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 70860
S11-0183-Rev. F, 07-Feb-11
2.0
1.6
1.2
0.8
0.4
0.0
1.0
0.8
0.6
0.4
0.2
0.0
- 50
4
3
2
1
0
V
GS
0
0
= 10 V, 9 V, 8 V,
- 25
On-Resistance vs. Junction Temperature
7 V, 6 V
On-Resistance vs. Gate-Source Voltage
1
2
V
V
DS
T
0
GS
J
Output Characteristics
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
25
4
2
V
GS
50
I
D
= 10 V at 250 mA
at 75 mA
I
D
3
6
75
at 250 mA
5 V
V
at 200 mA
100
GS
8
4
= 4.5 V
125
3 V
4 V
150
10
5
- 0.2
- 0.4
- 0.6
- 0.8
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
0.9
0.6
0.3
0.0
0.4
0.2
- 50
0
0.0
0
Threshold Voltage Variance Over Temperature
- 25
V
GS
1
0.2
On-Resistance vs. Drain Current
= 4.5 V
V
T
GS
0
Transfer Characteristics
J
2
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
I
D
- Drain Current (A)
25
0.4
3
I
D
T
50
J
= 250 µA
= - 55 °C
Vishay Siliconix
4
0.6
75
5
2N7002E
V
100
GS
125 °C
www.vishay.com
0.8
= 10 V
25 °C
6
125
1.0
150
7
3