2N7002E-T1-E3 Vishay, 2N7002E-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: 2N7002E-T1-E3
• Description: MOSFET N-CH 60V 240MA SOT-23
• Manufacturer: Vishay

Specifications of 2N7002E-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 Ohm @ 250mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 240mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 21pF @ 5V
• Power - Max: 350mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.24 A
• Power Dissipation: 350 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 240mA
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 3ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

2N7002E
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70860.
www.vishay.com
4
0.1
40
32
24
16
2
1
8
0
0
0
Source-Drain Diode Forward Voltage
0.2
5
V
V
SD
DS
- Source-to-Drain Voltage (V)
- Drain-to-Source Voltage (V)
0.4
Capacitance
10
T
J
= 85 °C
0.6
C
iss
25 °C
15
0.8
C
oss
20
- 55 °C
C
1.0
rss
1.2
25
1.0
0.8
0.6
0.4
0.2
0.0
0.0
V
I
D
DS
= 0.25 A
0.1
= 30 V
Q
g
- Total Gate Charge (nC)
Gate Charge
0.2
S11-0183-Rev. F, 07-Feb-11
0.3
Document Number: 70860
0.4
0.5