SI7192DP-T1-GE3 Vishay, SI7192DP-T1-GE3 Datasheet

MOSFET N-CH 30V 60A PPAK 8SOIC

SI7192DP-T1-GE3

Manufacturer Part Number
SI7192DP-T1-GE3
Description
MOSFET N-CH 30V 60A PPAK 8SOIC
Manufacturer
Vishay
Datasheet

Specifications of SI7192DP-T1-GE3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.9 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
135nC @ 10V
Input Capacitance (ciss) @ Vds
5800pF @ 15V
Power - Max
104W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0019 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
107 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
42 A
Power Dissipation
6250 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
60A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
1.9mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI7192DP-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7192DP-T1-GE3
Manufacturer:
Vishay/Siliconix
Quantity:
38 609
Part Number:
SI7192DP-T1-GE3
Manufacturer:
VISHAY
Quantity:
256
Part Number:
SI7192DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 54 °C/W.
Document Number: 69815
S-80790-Rev. B, 14-Apr-08
PRODUCT SUMMARY
Ordering Information: Si7192DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
DS
30
(V)
8
6.15 mm
D
7
D
0.00225 at V
0.0019 at V
6
D
PowerPAK
R
http://www.vishay.com/ppg?73257
5
Bottom View
DS(on)
D
GS
GS
(Ω)
J
1
= 10 V
®
= 150 °C)
= 4.5 V
b, f
S
SO-8
2
S
N-Channel 30-V (D-S) MOSFET
3
S
5.15 mm
4
I
D
G
60
60
(A)
a
d, e
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
A
= 25 °C, unless otherwise noted
Q
43.5 nC
Steady State
g
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
(Typ.)
C
C
A
A
C
A
C
C
A
A
t ≤ 10 s
New Product
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free
• TrenchFET
• 100 % R
• 100 % Avalanche Tested
• VRM, POL, Server
• High Current DC/DC
Symbol
Symbol
T
R
R
- Low-Side
J
V
V
E
I
I
P
, T
DM
I
I
AS
thJC
thJA
GS
DS
AS
D
S
D
stg
g
Tested
®
Gen III Power MOSFET
Typical
G
0.9
15
N-Channel MOSFET
- 55 to 150
6.25
5.6
4.0
Limit
42
34
± 20
66.6
100
125
104
260
60
60
60
30
50
b, c
b, c
b, c
b, c
D
S
a
a
a
b, c
Maximum
1.2
20
Vishay Siliconix
Si7192DP
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
RoHS
COMPLIANT
1

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SI7192DP-T1-GE3 Summary of contents

Page 1

... Bottom View Ordering Information: Si7192DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si7192DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 69815 S-80790-Rev. B, 14-Apr-08 New Product 1.5 2.0 2.5 7500 6000 4500 3000 1500 60 80 100 100 Si7192DP Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) ...

Page 4

... Si7192DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.6 0.3 0.0 - 0.3 - 0.6 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.010 0.008 ° ...

Page 5

... T - Case Temperature (°C) C Current Derating* 3.0 2.4 1.8 1.2 0.6 0.0 100 125 150 0 = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si7192DP Vishay Siliconix 125 150 100 125 T - Case Temperature (°C) C Power, Junction-to-Ambient www.vishay.com 150 5 ...

Page 6

... Si7192DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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