SI7192DP-T1-GE3 Vishay, SI7192DP-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI7192DP-T1-GE3
• Description: MOSFET N-CH 30V 60A PPAK 8SOIC
• Manufacturer: Vishay

Specifications of SI7192DP-T1-GE3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.9 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 135nC @ 10V
• Input Capacitance (ciss) @ Vds: 5800pF @ 15V
• Power - Max: 104W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0019 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 107 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 42 A
• Power Dissipation: 6250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 60A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 1.9mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI7192DP-T1-GE3TR

Si7192DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.3
- 0.6
- 0.9
- 1.2
0.01
100
0.6
0.3
0.0
0.1
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
T
SD
J
0
= 150 °C
- Source-to-Drain Voltage (V)
Threshold Voltage
T
0.4
J
25
- Temperature (°C)
0.6
50
75
I
0.8
D
T
J
= 250 µA
0.01
= 25 °C
100
0.1
100
10
0.01
1
Limited by R
I
1.0
D
Safe Operating Area, Junction-to-Ambient
* V
= 5 mA
125
GS
New Product
> minimum V
V
150
1.2
Single Pulse
DS(on)
0.1
DS
T
A
- Drain-to-Source Voltage (V)
= 25 °C
*
GS
at which R
1
0.010
0.008
0.006
0.004
0.002
0.000
DS(on)
200
160
120
80
40
0
0
10
0 .
0
0
is specified
1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1 s
10 s
DC
2
V
0.01
GS
100
-- Gate-to-Source Voltage (V)
4
Time (s)
0.1
S-80790-Rev. B, 14-Apr-08
T
T
Document Number: 69815
A
A
= 25 °C
= 125 °C
6
1
I
D
8
= 20 A
10
1
0