SI7192DP-T1-GE3 Vishay, SI7192DP-T1-GE3 Datasheet - Page 5

MOSFET N-CH 30V 60A PPAK 8SOIC

SI7192DP-T1-GE3

Manufacturer Part Number
SI7192DP-T1-GE3
Description
MOSFET N-CH 30V 60A PPAK 8SOIC
Manufacturer
Vishay
Datasheet

Specifications of SI7192DP-T1-GE3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.9 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
135nC @ 10V
Input Capacitance (ciss) @ Vds
5800pF @ 15V
Power - Max
104W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0019 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
107 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
42 A
Power Dissipation
6250 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
60A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
1.9mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI7192DP-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7192DP-T1-GE3
Manufacturer:
Vishay/Siliconix
Quantity:
38 609
Part Number:
SI7192DP-T1-GE3
Manufacturer:
VISHAY
Quantity:
256
Part Number:
SI7192DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69815
S-80790-Rev. B, 14-Apr-08
125
100
75
50
25
0
0
25
D
Power, Junction-to-Case
T
is based on T
C
50
- Case Temperature (°C)
75
J(max)
100
= 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
180
144
108
72
36
0
0
125
25
New Product
150
T
Package Limited
C
Current Derating*
- Case Temperature (°C)
50
75
100
3.0
2.4
1.8
1.2
0.6
0.0
0
125
25
Power, Junction-to-Ambient
150
T
C
50
- Case Temperature (°C)
75
Vishay Siliconix
100
Si7192DP
www.vishay.com
125
150
5

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