PMBF170,235 NXP Semiconductors, PMBF170,235 Datasheet - Page 9

MOSFET N-CH TRENCH 60V SOT-23

PMBF170,235

Manufacturer Part Number
PMBF170,235
Description
MOSFET N-CH TRENCH 60V SOT-23
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of PMBF170,235

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
300mA
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
40pF @ 10V
Power - Max
830mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933966340235
9. Package outline
Fig 14. SOT23.
Philips Semiconductors
9397 750 07208
Product specification
Plastic surface mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT23
1.1
0.9
A
max.
A
0.1
1
1
0.48
0.38
b
p
IEC
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
TO-236AB
JEDEC
1.4
1.2
E
REFERENCES
0
2
Rev. 03 — 23 June 2000
1.9
e
w
0.95
B
M
e
1
scale
B
EIAJ
1
N-channel enhancement mode field-effect transistor
2.5
2.1
H
E
0.45
0.15
L
A
p
2 mm
A 1
0.55
0.45
Q
H E
0.2
E
v
detail X
PROJECTION
0.1
EUROPEAN
w
L p
A
© Philips Electronics N.V. 2000. All rights reserved.
Q
PMBF170
c
X
v
ISSUE DATE
M
97-02-28
99-09-13
A
SOT23
9 of 13

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