PMF280UN,115 NXP Semiconductors, PMF280UN,115 Datasheet - Page 7

• Manufacturer Part Number: PMF280UN,115
• Description: MOSFET N-CH 20V 1.02A SOT-323
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMF280UN,115

• Package / Case: SC-70-3, SOT-323-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 340 mOhm @ 200mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.02A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 0.89nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 45pF @ 20V
• Power - Max: 560mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.34 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.02 A
• Power Dissipation: 560 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057725115; PMF280UN T/R; PMF280UN T/R

Philips Semiconductors
9397 750 12768
Product data
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
V GS(th)
I
V
(V)
D
GS
0.8
0.6
0.4
0.2
= 0.25 mA; V
1
0
junction temperature.
= 0 V; f = 1 MHz
-60
DS
0
= V
GS
min
typ
60
(pF)
C
10 2
10
120
1
10 -1
T j ( C)
03aj65
Rev. 01 — 27 February 2004
180
1
Fig 10. Sub-threshold drain current as a function of
10
(A)
I D
T
10 -3
10 -4
10 -5
10 -6
j
= 25 C; V
N-channel TrenchMOS™ ultra low level FET
gate-source voltage.
V DS (V)
0
C iss
C oss
C rss
03an06
DS
10 2
= 5 V
0.2
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
min
0.4
PMF280UN
0.6
typ
V GS (V)
03am43
0.8
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