BSH207,135 NXP Semiconductors, BSH207,135 Datasheet - Page 2

• Manufacturer Part Number: BSH207,135
• Description: MOSFET P-CH 12V 1.52A SOT457
• Manufacturer: NXP Semiconductors

Specifications of BSH207,135

• Package / Case: SC-74-6
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 1.52A
• Vgs(th) (max) @ Id: 600mV @ 1mA
• Gate Charge (qg) @ Vgs: 8.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 500pF @ 9.6V
• Power - Max: 417mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.12 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.52 A
• Power Dissipation: 417 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055227135; BSH207 /T3; BSH207 /T3

Philips Semiconductors
ELECTRICAL CHARACTERISTICS
T
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
August 1998
P-channel enhancement mode
MOS transistor
SYMBOL PARAMETER
V
V
R
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
j
j
SYMBOL PARAMETER
I
I
V
t
Q
= 25˚C unless otherwise specified
GSS
DSS
d on
r
d off
f
DR
DRM
rr
= 25˚C unless otherwise specified
fs
(BR)DSS
GS(TO)
DS(ON)
iss
oss
rss
SD
g(tot)
gs
gd
rr
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source on-state
resistance
Forward transconductance
Gate source leakage current V
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Input capacitance
Output capacitance
Feedback capacitance
Continuous reverse drain
current
Pulsed reverse drain current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
CONDITIONS
V
V
V
V
V
V
V
V
I
V
V
Resistive load
V
D
GS
DS
GS
GS
GS
GS
DS
GS
DS
DD
GS
GS
= -1 A; V
CONDITIONS
T
I
I
V
= 0 V; I
= V
= -4.5 V; I
= -2.5 V; I
= -1.8 V; I
= -2.5 V; I
= -9.6 V; I
= 8 V; V
= -9.6 V; V
= -10 V; I
= -8 V; R
= 0 V; V
F
F
a
GS
= -0.62 A; V
= -0.5 A; -dI
= 25 ˚C
GS
= 0 V; V
; I
DD
D
D
DS
= -10 A
= -1 mA
= -10 V; V
G
DS
D
D
D
D
D
D
2
= 6
= -9.6 V; f = 1 MHz
GS
= -1 A;
= -1 A
= -1 A
= -1 A
= -0.5 A
= -1 A; T
= 0 V
R
= 0 V;
= -9.6 V
F
GS
/dt = 100 A/ s;
= 0 V
GS
j
= 150˚C
= -4.5 V
T
T
j
j
= 150˚C
= 150˚C
MIN.
-
-
-
-
-
MIN.
-0.4
-0.1
-12
1.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-0.62
TYP.
75
69
TYP. MAX. UNIT
-
-
Product specification
-0.6
117
140
175
500
210
-50
-13
4.5
8.8
0.7
2.0
4.5
80
45
20
62
10
2
-
-
MAX.
-1.52
-6.09
-1.3
-100
-100
120
150
180
230
-
-
100
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BSH207
Rev 1.000
UNIT
m
m
m
m
nC
ns
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
A
A
V
V
V
V
S
A