PMZ390UN,315 NXP Semiconductors, PMZ390UN,315 Datasheet
PMZ390UN,315
Specifications of PMZ390UN,315
PMZ390UN T/R
PMZ390UN T/R
Related parts for PMZ390UN,315
PMZ390UN,315 Summary of contents
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PMZ390UN N-channel TrenchMOS standard level FET Rev. 01 — 12 July 2007 BOTTOM VIEW 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. 1.2 Features I Profi lower ...
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... NXP Semiconductors 3. Ordering information Table 2. Ordering information Type number Package Name PMZ390UN SC-101 4. Limiting values CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20 , IEC/ST 61340-5 , JESD625-A or equivalent standards. ...
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... NXP Semiconductors 120 P der (%) 100 P tot P = ----------------------- - 100 % der P tot 25 C Fig 1. Normalized total power dissipation as a function of solder point temperature ( single pulse mb DM Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PMZ390UN_1 Product data sheet 03aa17 ...
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... NXP Semiconductors 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter R thermal resistance from junction to solder point th(j-sp) R thermal resistance from junction to ambient th(j-a) [1] Mounted on a printed-circuit board; vertical in still air th(j-sp) (K/W) = 0.5 0.2 10 0.1 0.05 0.02 single pulse Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration ...
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... NXP Semiconductors 6. Characteristics Table 5. Characteristics unless otherwise specified. j Symbol Parameter Static characteristics V drain-source breakdown (BR)DSS voltage V gate-source threshold voltage GS(th) I drain leakage current DSS I gate leakage current GSS R drain-source on-state DSon resistance Dynamic characteristics Q total gate charge G(tot) Q gate-source charge ...
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... NXP Semiconductors 2.5 4 (A) 2 1 Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values 2 ( 1 and 150 Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values PMZ390UN_1 Product data sheet 03an94 3 2 1.8 V ( ...
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... NXP Semiconductors 1.2 V GS(th) (V) max 0.9 typ 0.6 min 0 Fig 9. Gate-source threshold voltage as a function of junction temperature ( 0.2 0 Fig 11. Gate-source voltage as a function of gate charge; typical values PMZ390UN_1 Product data sheet 03aj65 (A) 120 180 Fig 10. Sub-threshold drain current as a function of 03an99 0 ...
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... NXP Semiconductors (A) 0.8 0.6 0.4 0.2 150 0.2 0 and 150 Fig 13. Source current as a function of source-drain voltage; typical values PMZ390UN_1 Product data sheet 03an97 C (pF 0 Fig 14. Input, output and reverse transfer capacitances Rev. 01 — 12 July 2007 PMZ390UN N-channel TrenchMOS standard level FET ...
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... NXP Semiconductors 7. Package outline Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0 DIMENSIONS (mm are the original dimensions) A (1) 1 UNIT max. 0.50 0.20 0.55 mm 0.03 0.46 0.12 0.47 Note 1. Including plating thickness OUTLINE VERSION IEC SOT883 Fig 15. Package outline SO883 (SC-101) ...
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... NXP Semiconductors 8. Soldering R = 0.05 ( 0.90 0.20 0. Dimensions in mm Fig 16. Reflow soldering footprint for SOT883 PMZ390UN_1 Product data sheet 1.30 0. 0.05 (12 ) 0.60 0.70 0.80 0.30 0. 0.40 0. 0.50 MBL873 0. Rev. 01 — 12 July 2007 PMZ390UN N-channel TrenchMOS standard level FET solder lands ...
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... NXP Semiconductors 9. Revision history Table 6. Revision history Document ID Release date PMZ390UN _1 20070712 PMZ390UN_1 Product data sheet N-channel TrenchMOS standard level FET Data sheet status Change notice Product data sheet - Rev. 01 — 12 July 2007 PMZ390UN Supersedes - © NXP B.V. 2007. All rights reserved. ...
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... For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail ...
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... NXP Semiconductors 12. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 10 Legal information 10.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 10.2 Defi ...