RZQ045P01TR Rohm Semiconductor, RZQ045P01TR Datasheet
RZQ045P01TR
Specifications of RZQ045P01TR
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RZQ045P01TR Summary of contents
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Transistors 1.5V Drive Pch MOSFET RZQ045P01 Structure Silicon P-channel MOSFET Features 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) Applications Switching Packaging specifications Package Taping Type Code Basic ordering unit (pieces) 3000 RZQ045P01 Absolute maximum ratings ...
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Transistors Electrical characteristics (Ta=25°C) Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS (th) Static drain-source on-state R DS (on) resistance Forward transfer admittance Y ...
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Transistors Electrical characteristic curves 10 Ta=25℃ -10V Pulsed 8 -4.5V -2.5V -1.5V -1.8V 6 -1.4V 4 -1. =-1. 0.0 0.2 0.4 0.6 0.8 1.0 DRAIN-SOURCE VOLTAGE : -V [V] DS Fig.1 Typical Output Characteristics(Ⅰ) 1000 Ta=25℃ ...
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Transistors 80 Ta=25℃ Pulsed -2. -4. GATE-SOURCE VOLTAGE : -V GS Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 10000 Ta=25°C f=1MHz Ciss V ...
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Transistors Measurement circuits D.U. Fig.15 Switching Time Measurement Circuit G(Const Fig.17 Gate Charge Measurement Circuit Notice This product might cause chip aging and breakdown under the large electrified environment ...
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Appendix No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM CO.,LTD. The content specified herein is subject to change for improvement without notice. The content specified herein is for the ...