RZQ045P01TR Rohm Semiconductor, RZQ045P01TR Datasheet - Page 2

MOSFET P-CH 12V 4.5A TSMT6

RZQ045P01TR

Manufacturer Part Number
RZQ045P01TR
Description
MOSFET P-CH 12V 4.5A TSMT6
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of RZQ045P01TR

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
35 mOhm @ 4.5A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
4.5A
Vgs(th) (max) @ Id
1V @ 1mA
Gate Charge (qg) @ Vgs
31nC @ 4.5V
Input Capacitance (ciss) @ Vds
2450pF @ 6V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
TSMT6
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
4.5 A
Power Dissipation
1250 mW
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RZQ045P01TR
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
∗Pulsed
∗Pulsed
Forward voltage
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
Gate-drain
Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-drain) (Ta=25°C)
Parameter
Parameter
charge
charge
V
Symbol
Symbol
R
V
(BR) DSS
t
t
V
I
C
I
DS (on)
C
C
Q
GS (th)
d (on)
d (off)
Q
GSS
Y
Q
DSS
t
t
SD
oss
iss
rss
r
f
gs
gd
fs
g
Min.
Min.
−0.3
−12
6.5
2450
Typ.
Typ.
320
290
390
215
4.5
4.0
25
31
39
50
12
75
31
Max.
Max.
−1.2
−1.0
±10
100
−1
35
43
58
Unit
Unit
mΩ
mΩ
mΩ
mΩ
µA
µA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
V
S
V
I
V
V
I
I
I
I
V
V
V
f=1MHz
I
V
V
R
R
V
V
I
I
D
D
D
D
D
D
D
S
GS
DS
DS
DS
DS
GS
DD
GS
DD
GS
= −1mA, V
= −4.5A, V
= −2.2A, V
= −2.2A, V
= −0.9A, V
= −2.2A
L
G
= −4.5A
= −4.5A, V
=10Ω
=±10V, V
= −12V, V
= −6V, I
= −6V, I
= −6V
=0V
= −4.5V
= −4.5V
2.7Ω
−6V
−6 V
Conditions
Conditions
D
D
GS
GS
GS
GS
GS
= −1mA
= −4.5A
GS
DS
GS
R
R
=0V
= −4.5V
= −2.5V
= −1.8V
= −1.5V
=0V
=0V
L
G
=0V
=10Ω
1.3Ω
RZQ045P01
2/5

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