BSP130,115 NXP Semiconductors, BSP130,115 Datasheet

MOSFET N-CH 300V 350MA SOT223

BSP130,115

Manufacturer Part Number
BSP130,115
Description
MOSFET N-CH 300V 350MA SOT223
Manufacturer
NXP Semiconductors
Datasheet
1.BSP130115.pdf (12 pages)

Specifications of BSP130,115

Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Mounting Type
Surface Mount
Power - Max
1.5W
Fet Type
MOSFET N-Channel, Metal Oxide
Vgs(th) (max) @ Id
2V @ 1mA
Current - Continuous Drain (id) @ 25° C
350mA
Drain To Source Voltage (vdss)
300V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6 Ohm @ 250mA, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
6 Ohm @ 10 V
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.35 A
Power Dissipation
1500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934023500115::BSP130 T/R::BSP130 T/R
Product specification
Supersedes data of 1997 Jun 23
DATA SHEET
BSP130
N-channel enhancement mode
vertical D-MOS transistor
age
M3D087
DISCRETE SEMICONDUCTORS
2001 Dec 11

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BSP130,115 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET age M3D087 BSP130 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 23 2001 Dec 11 ...

Page 2

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. APPLICATIONS Line current interruptor in telephone sets Relay, high-speed and line transformer drivers. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor ...

Page 3

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to ambient; note 1 th j-a Note 1. Device mounted on an epoxy printed-circuit board 1.5 mm, mounting pad for ...

Page 4

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor handbook, halfpage Fig.2 Switching times test circuit. 2 handbook, halfpage P tot (W) 1 100 Fig.4 Power derating curve. 2001 Dec 11 ...

Page 5

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor 1.2 handbook, halfpage (A) 3.5 V 0.8 0 Fig.6 Typical output characteristics. 30 ...

Page 6

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor 2 10 handbook, full pagewidth = 0.75 0 j-a (K/W) 0.2 10 0.1 0.05 0.02 0. Fig.10 Transient thermal resistance from junction ...

Page 7

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor 2 handbook, halfpage k 1 DS(on ----------------------------------------- DS(on) Typical R ; DSon ( 250 ...

Page 8

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads DIMENSIONS (mm are the original dimensions) UNIT ...

Page 9

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor DATA SHEET STATUS PRODUCT (1) DATA SHEET STATUS STATUS Objective data Development Preliminary data Qualification Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing ...

Page 10

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor 2001 Dec 11 NOTES 10 Product specification BSP130 ...

Page 11

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor 2001 Dec 11 NOTES 11 Product specification BSP130 ...

Page 12

Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited ...

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