BUK9624-55A,118 NXP Semiconductors, BUK9624-55A,118 Datasheet - Page 8

• Manufacturer Part Number: BUK9624-55A,118
• Description: MOSFET N-CH 55V 46A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9624-55A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21.7 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 46A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 1815pF @ 25V
• Power - Max: 105W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0217 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 46 A
• Power Dissipation: 105000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056287118; BUK9624-55A /T3; BUK9624-55A /T3

NXP Semiconductors
BUK9624-55A
Product data sheet
Fig 13. Normalized drain-source on-state resistance
a
2.4
1.8
1.2
0.6
0
−60
factor as a function of junction temperature
0
60
120
All information provided in this document is subject to legal disclaimers.
T
j
(°C)
03aa28
Rev. 02 — 31 January 2011
180
Fig 14. Reverse diode current as a function of reverse
(A)
I
S
100
80
60
40
20
0
diode voltage; typical values
0
0.2
N-channel TrenchMOS logic level FET
0.4
T
j
0.6
= 175 °C
BUK9624-55A
0.8
1
T
1.2
j
= 25 °C
© NXP B.V. 2011. All rights reserved.
1.4
V
03na01
SD
(V)
1.6
8 of 13