BUK9535-55A,127 NXP Semiconductors, BUK9535-55A,127 Datasheet - Page 6

• Manufacturer Part Number: BUK9535-55A,127
• Description: MOSFET N-CH 55V 34A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9535-55A,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 32 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 34A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 1173pF @ 25V
• Power - Max: 85W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.032 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 34 A
• Power Dissipation: 85 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Details
• Other names: 934056191127; BUK9535-55A; BUK9535-55A

Philips Semiconductors
February 2000
TrenchMOS
Logic level FET
current(I
Fig.18. Maximum permissible repetitive avalanche
VGS
0
100
I
10
AV
1
0.001
Fig.17. Avalanche energy test circuit.
T
AV
j
prior to avalanche 150
W
) versus avalanche time(t
DSS
RGS
0.01
0.5 LI
Avalanche Time, t
inductive loads.
transistor
D
2
o
C
BV
0.1
DSS
L
AV
VDS
BV
T.U.T.
(ms)
DSS
AV
) for unclamped
1
shunt
R 01
25
V
o
DD
C
-
+
-ID/100
VDD
10
6
VGS
0
Fig.19. Switching test circuit.
RG
RD
VDS
T.U.T.
Product specification
BUK9535-55A
BUK9635-55A
-
+
Rev 1.000
VDD