BUK9618-55A,118 NXP Semiconductors, BUK9618-55A,118 Datasheet - Page 6

• Manufacturer Part Number: BUK9618-55A,118
• Description: MOSFET N-CH 55V 61A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9618-55A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 61A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 34nC @ 5V
• Input Capacitance (ciss) @ Vds: 2210pF @ 25V
• Power - Max: 136W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 61 A
• Power Dissipation: 136000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056812118; BUK9618-55A /T3; BUK9618-55A /T3

NXP Semiconductors
Table 6.
BUK9618-55A
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(A)
(A)
I
10
I
10
10
10
10
10
D
D
250
200
150
100
50
-1
-2
-3
-4
-5
-6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
2
6
1
min
4
8
…continued
typ
6
V
2
GS
max
(V) = 10
V
Conditions
I
see
I
V
All information provided in this document is subject to legal disclaimers.
S
S
8
GS
GS
03aa36
V
= 20 A; V
= 20 A; dI
DS
(V)
5
Figure 15
03ne45
= -10 V; V
2.2
(V)
3
Rev. 02 — 16 February 2011
4
10
3
GS
S
/dt = -100 A/µs;
DS
= 0 V; T
= 30 V; T
Fig 6.
Fig 8.
j
= 25 °C;
R
(mΩ)
(S)
DSon
g
j
fs
= 25 °C
20
18
16
14
12
10
50
40
30
20
10
0
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
3
0
10
N-channel TrenchMOS logic level FET
5
20
7
BUK9618-55A
Min
-
-
-
30
9
11
40
Typ
0.85
53
101
© NXP B.V. 2011. All rights reserved.
13
50
V
I
Max
1.2
-
-
03ne44
GS
03ne42
D
(A)
(V)
15
60
Unit
V
ns
nC
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