BUK9215-55A,118 NXP Semiconductors, BUK9215-55A,118 Datasheet - Page 4

• Manufacturer Part Number: BUK9215-55A,118
• Description: MOSFET N-CH 55V 55A SOT428
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9215-55A,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 48nC @ 5V
• Input Capacitance (ciss) @ Vds: 2916pF @ 25V
• Power - Max: 115W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0136 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 62 A
• Power Dissipation: 115000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056699118; BUK9215-55A /T3; BUK9215-55A /T3

NXP Semiconductors
BUK9215-55A
Product data sheet
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
(A)
I
D
10
10
10
1
3
2
1
P
R
t
p
DSon
T
= V
δ =
DS
t
T
t
All information provided in this document is subject to legal disclaimers.
p
/ I
D
Rev. 02 — 7 February 2011
DC
10
V
DS
N-channel TrenchMOS logic level FET
(V)
t
100 μs
1 ms
10 ms
100 ms
p
BUK9215-55A
= 10 μs
03nf78
10
2
© NXP B.V. 2011. All rights reserved.
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