PSMN006-20K,518 NXP Semiconductors, PSMN006-20K,518 Datasheet - Page 9

• Manufacturer Part Number: PSMN006-20K,518
• Description: MOSFET N-CH 20V 32A 8-SOIC
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN006-20K,518

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 mOhm @ 5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 700mV @ 1mA
• Gate Charge (qg) @ Vgs: 32nC @ 2.5V
• Input Capacitance (ciss) @ Vds: 4350pF @ 20V
• Power - Max: 8.3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.005 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 32 A
• Power Dissipation: 8.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 90 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 32 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057032518; PSMN006-20K /T3; PSMN006-20K /T3

Philips Semiconductors
9. Package outline
Fig 14. SOT96-1 (SO8).
9397 750 09631
Product data
SO8: plastic small outline package; 8 leads; body width 3.9 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
inches
UNIT
mm
OUTLINE
VERSION
SOT96-1
0.069
max.
1.75
A
0.010
0.004
0.25
0.10
A
1
0.057
0.049
1.45
1.25
A
076E03
2
IEC
1
8
Z
pin 1 index
0.25
0.01
y
A
3
e
0.019
0.014
0.49
0.36
b
p
D
0.0100
0.0075
0.25
0.19
MS-012
JEDEC
c
b
REFERENCES
0.20
0.19
p
D
5.0
4.8
5
4
0
(1)
Rev. 01 — 30 May 2002
w
0.16
0.15
E
4.0
3.8
(2)
M
scale
0.050
EIAJ
1.27
2.5
c
e
A
0.244
0.228
2
H
6.2
5.8
A
E
1
0.041
1.05
5 mm
L
H
0.039
0.016
E
E
1.0
0.4
detail X
L
p
L
0.028
0.024
L
TrenchMOS™ ultra low level FET
0.7
0.6
Q
p
Q
PROJECTION
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
(A )
EUROPEAN
PSMN006-20K
0.25
0.01
3
A
v
0.25
0.01
A
w
X
v
M
0.004
A
0.1
y
ISSUE DATE
97-05-22
99-12-27
0.028
0.012
Z
0.7
0.3
(1)
SOT96-1
8
0
o
o
9 of 12