BUK9623-75A,118 NXP Semiconductors, BUK9623-75A,118 Datasheet

MOSFET N-CH 75V 53A D2PAK

BUK9623-75A,118

Manufacturer Part Number
BUK9623-75A,118
Description
MOSFET N-CH 75V 53A D2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheets

Specifications of BUK9623-75A,118

Package / Case
D²Pak, TO-263 (2 leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
22 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
53A
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
3120pF @ 25V
Power - Max
138W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.022 Ohm @ 10 V
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
53 A
Power Dissipation
138000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934056476118
BUK9623-75A /T3
BUK9623-75A /T3
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
P
I
D
DS
tot
BUK9623-75A
N-channel TrenchMOS logic level FET
Rev. 02 — 16 February 2011
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
12 V, 24 V and 42 V loads
Automotive and general purpose
power switching
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
Conditions
T
V
see
T
j
mb
GS
≥ 25 °C; T
Figure
= 25 °C; see
= 5 V; T
1; see
mb
j
≤ 175 °C
= 25 °C;
Figure 2
Figure 3
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
Motors, lamps and solenoids
Min
-
-
-
Product data sheet
Typ
-
-
-
Max Unit
75
53
138
V
A
W

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BUK9623-75A,118 Summary of contents

Page 1

... BUK9623-75A N-channel TrenchMOS logic level FET Rev. 02 — 16 February 2011 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... GS avalanche energy °C; unclamped j(init) Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 February 2011 BUK9623-75A N-channel TrenchMOS logic level FET Min = Figure 12; ≤ sup = 5 V ...

Page 3

... P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 February 2011 BUK9623-75A N-channel TrenchMOS logic level FET Min - - -10 Figure 1 - Figure 1; - ≤ 10 µ -55 -55 - ° Ω ...

Page 4

... δ D. Conditions see Figure 4 mounted on printed-circuit board ; SOT404 package; minimum footprint −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 February 2011 BUK9623-75A N-channel TrenchMOS logic level FET 03nb23 100 100 (V) DS Min Typ - - - 50 03nb24 t p δ = ...

Page 5

... °C j from source lead to source bond pad ° see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 February 2011 BUK9623-75A N-channel TrenchMOS logic level FET Min Typ Max 1 500 - 0. ...

Page 6

... R DSon 7 (mOhm (V) DS Fig 6. 03aa36 max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 February 2011 BUK9623-75A N-channel TrenchMOS logic level FET Drain-source on-state resistance as a function of gate-source voltage; typical values ( Forward transconductance as a function of drain current; typical values ...

Page 7

... V (V) GS Fig 10. Gate-source voltage as a function of turn-on 03na17 R DSon (mΩ) 100 140 180 T (°C) j Fig 12. Drain-source on-state resistance as a function All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 February 2011 BUK9623-75A N-channel TrenchMOS logic level FET 14( 60( gate charge; typical values 60 3 ...

Page 8

... Fig 14. Input, output and reverse transfer capacitances ( 175 ° 0.0 0.2 0.4 0.6 0.8 All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 February 2011 BUK9623-75A N-channel TrenchMOS logic level FET C iss C oss C rss 0 −2 − function of drain-source voltage; typical values 03nb11 = 25 ° ...

Page 9

... REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 February 2011 BUK9623-75A N-channel TrenchMOS logic level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © ...

Page 10

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK9623-75A separated from data sheet BUK9523_9623_75A v.1. BUK9523_9623_75A v.1 20001010 BUK9623-75A Product data sheet ...

Page 11

... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 February 2011 BUK9623-75A N-channel TrenchMOS logic level FET © NXP B.V. 2011. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 February 2011 BUK9623-75A N-channel TrenchMOS logic level FET Trademarks © NXP B.V. 2011. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 16 February 2011 Document identifier: BUK9623-75A ...

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