PH4830L,115 NXP Semiconductors, PH4830L,115 Datasheet - Page 4

• Manufacturer Part Number: PH4830L,115
• Description: MOSFET N-CH 30V 84A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PH4830L,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 84A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 22.9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2786pF @ 12V
• Power - Max: 62.5W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.8 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 84 A
• Power Dissipation: 62.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061157115; PH4830L T/R; PH4830L T/R

NXP Semiconductors
5. Thermal characteristics
Table 4.
PH4830L_1
Product data sheet
Symbol Parameter
R
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
1
1
2
10
thermal resistance from junction to mounting base see
0.2
0.1
0.05
0.02
Thermal characteristics
single pulse
5
= 0.5
10
4
10
3
Rev. 01 — 6 September 2007
10
Conditions
2
Figure 4
10
N-channel TrenchMOS logic level FET
1
Min
-
P
1
t
p
PH4830L
T
Typ
-
t
p
© NXP B.V. 2007. All rights reserved.
(s)
003aab772
=
t
T
t
p
Max
2
10
4 of 12
Unit
K/W