BUK7208-40B,118 NXP Semiconductors, BUK7208-40B,118 Datasheet - Page 5
![MOSFET N-CH 40V 75A DPAK](/photos/5/32/53207/dpak_sml.jpg)
BUK7208-40B,118
Manufacturer Part Number
BUK7208-40B,118
Description
MOSFET N-CH 40V 75A DPAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK7208-40B118.pdf
(14 pages)
Specifications of BUK7208-40B,118
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Mounting Type
Surface Mount
Power - Max
167W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
35nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
40V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.008 Ohm @ 10 V
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
105 A
Power Dissipation
167000 mW
Maximum Operating Temperature
+ 185 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057607118::BUK7208-40B /T3::BUK7208-40B /T3
NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK7208-40B
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
−3
1
10
δ = 0.5
−6
0.1
0.05
0.02
0.2
single shot
10
−5
All information provided in this document is subject to legal disclaimers.
10
−4
Rev. 03 — 7 June 2010
Conditions
see
10
−3
Figure 4
10
N-channel TrenchMOS standard level FET
−2
P
10
t
p
−1
T
t
BUK7208-40B
p
Min
-
-
δ =
(s)
03nk52
t
T
t
p
1
Typ
-
71.4
© NXP B.V. 2010. All rights reserved.
Max
0.95
-
Unit
K/W
K/W
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