BUK7Y13-40B,115 NXP Semiconductors, BUK7Y13-40B,115 Datasheet - Page 7

• Manufacturer Part Number: BUK7Y13-40B,115
• Description: MOSFET N-CH TRENCH 40V LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7Y13-40B,115

• Package / Case: LFPak-4
• Mounting Type: Surface Mount
• Power - Max: 85W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 58A
• Drain To Source Voltage (vdss): 40V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 13 mOhm @ 25A, 10V
• Gate Charge Qg: 19 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 58 A
• Power Dissipation: 85 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060169115

NXP Semiconductors
BUK7Y13-40B_3
Product data sheet
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
1.5
0.5
5
4
3
2
1
0
2
1
0
−60
junction temperature
−60
a =
factor as a function of junction temperature
I
D
= 1 m A;V
R
DSon ( 25°C )
R
DSon
DS
0
0
= V
GS
60
60
max
min
typ
120
120
T
003aab851
T
j
j
(°C)
(°C)
03aa32
180
180
Rev. 03 — 26 May 2008
Fig 11. Sub-threshold drain current as a function of
Fig 13. Drain-source on-state resistance as a function
R
(mΩ)
DSon
(A)
I
10
10
10
10
10
10
D
30
20
10
−1
−2
−3
−4
−5
−6
0
T
T
gate-source voltage
of drain current; typical values
0
0
j
j
= 25 °C;V
= 25 °C
V
N-channel TrenchMOS standard level FET
GS
(V) = 6
40
DS
= V
2
GS
min
BUK7Y13-40B
7
80
typ
4
8
120
max
V
© NXP B.V. 2008. All rights reserved.
GS
10
003aab396
20
I
D
(V)
(A)
03aa35
160
6
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