BUK9217-75B,118 NXP Semiconductors, BUK9217-75B,118 Datasheet - Page 3

• Manufacturer Part Number: BUK9217-75B,118
• Description: MOSFET N-CH 75V 64A DPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9217-75B,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Mounting Type: Surface Mount
• Power - Max: 167W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 35nC @ 5V
• Vgs(th) (max) @ Id: 2V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 64A
• Drain To Source Voltage (vdss): 75V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.015 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 64 A
• Power Dissipation: 167000 mW
• Maximum Operating Temperature: + 185 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057721118::BUK9217-75B /T3::BUK9217-75B /T3

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BUK9217-75B
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
DS
DGR
GS
tot
DS(AL)S
(A)
75
50
25
I
D
0
mounting base temperature
Continuous drain current as a function of
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
50
100
150
All information provided in this document is subject to legal disclaimers.
T
mb
03no50
(°C)
200
Rev. 02 — 3 February 2011
Conditions
T
R
T
see
T
T
see
T
T
pulsed; t
I
V
D
j
mb
mb
mb
mb
mb
GS
GS
≥ 25 °C; T
= 64 A; V
Figure 3
Figure 3
= 25 °C; V
= 100 °C; V
= 25 °C; pulsed; t
= 25 °C; see
= 25 °C
= 5 V; T
= 20 kΩ
Fig 2.
p
≤ 10 µs; T
sup
j(init)
j
≤ 185 °C
P
(%)
120
GS
der
80
40
≤ 75 V; R
GS
0
function of mounting base temperature
= 25 °C; unclamped
Normalized total power dissipation as a
Figure 2
0
= 5 V; see
= 5 V; see
mb
p
= 25 °C
≤ 10 µs;
N-channel TrenchMOS logic level FET
GS
50
= 50 Ω;
Figure
Figure 1
1;
BUK9217-75B
100
Min
-
-
-15
-
-
-
-
-55
-55
-
-
-
150
© NXP B.V. 2011. All rights reserved.
T
mb
03no96
185
185
Max
75
75
15
64
45
256
167
64
256
147
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
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