BUK9535-100A,127 NXP Semiconductors, BUK9535-100A,127 Datasheet - Page 8

• Manufacturer Part Number: BUK9535-100A,127
• Description: MOSFET N-CH 100V 41A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9535-100A,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 34 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 41A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 3573pF @ 25V
• Power - Max: 149W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.034 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 41 A
• Power Dissipation: 149000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934055656127; BUK9535-100A; BUK9535-100A

Philips Semiconductors
9397 750 07808
Product specification
Fig 13. Transfer characteristics: drain current as a
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
V
V
GS
DS
function of gate-source voltage; typical values.
= 25 V
= 0 V
I D
100
(A)
80
60
40
20
0
0
1
T j = 175 o C
2
T j = 25 o C
3
I S
V GS (V)
100
(A)
80
60
40
20
0
0.0
4
Rev. 01 — 22 January 2001
BUK9535-100A; BUK9635-100A
0.5
T j = 175 o C
Fig 14. Gate-source voltage as a function of turn-on
T
1.0
j
= 25 C; I
T j = 25 o C
gate charge; typical values.
V SD (V)
V GS
(V)
5
4
3
2
1
0
03nd06
0
D
1.5
= 20 A
20
TrenchMOS™ logic level FET
V DD = 14 V
© Philips Electronics N.V. 2001. All rights reserved.
40
V DD = 80 V
Q G (nC)
60
8 of 15