BUK7628-100A,118 NXP Semiconductors, BUK7628-100A,118 Datasheet - Page 2

• Manufacturer Part Number: BUK7628-100A,118
• Description: MOSFET N-CH 100V 47A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7628-100A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 28 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 3100pF @ 25V
• Power - Max: 166W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.028 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 47 A
• Power Dissipation: 166000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934055882118; BUK7628-100A /T3; BUK7628-100A /T3

Philips Semiconductors
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
March 2000
TrenchMOS
Standard level FET
j
SYMBOL PARAMETER
V
V
I
I
R
mb
SYMBOL PARAMETER
C
C
C
t
t
t
t
L
L
L
L
j
SYMBOL PARAMETER
I
I
V
t
Q
= 25˚C unless otherwise specified
DSS
GSS
d on
r
d off
f
DR
DRM
rr
= 25˚C unless otherwise specified
d
d
d
s
(BR)DSS
GS(TO)
SD
DS(ON)
iss
oss
rss
rr
= 25˚C unless otherwise specified
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
Input capacitance
Output capacitance
Feedback capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
Internal drain inductance
Internal source inductance
Continuous reverse drain
current
Pulsed reverse drain current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
transistor
CONDITIONS
V
V
V
V
V
CONDITIONS
V
V
V
Measured from drain lead 6 mm
from package to centre of die
Measured from contact screw on
tab to centre of die(TO220AB)
Measured from upper edge of drain
tab to centre of die(SOT404)
Measured from source lead to
source bond pad
CONDITIONS
I
I
I
V
F
F
F
GS
DS
DS
GS
GS
GS
DD
GS
GS
= 25 A; V
= 47 A; V
= 47 A; -dI
= V
= 100 V; V
= 0 V; I
= 20 V; V
= 10 V; I
= 0 V; V
= 30 V; R
= 10 V; R
= -10 V; V
GS
; I
2
D
D
GS
GS
DS
D
F
= 0.25 mA;
= 1 mA
/dt = 100 A/ s;
load
G
= 0 V
= 0 V
= 25 A
R
GS
DS
= 25 V; f = 1 MHz
= 10
= 30 V
=1.2 ;
= 0 V;
= 0 V
T
T
T
T
T
j
j
j
j
j
= 175˚C
= 175˚C
= 175˚C
= -55˚C
= -55˚C
MIN.
MIN.
MIN.
100
89
2
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
TYP.
2320
TYP.
0.05
0.85
0.24
315
187
4.5
3.5
2.5
7.5
1.1
BUK7528-100A
BUK7628-100A
20
15
70
83
45
66
3
2
-
-
-
-
-
-
-
-
Product specification
MAX.
MAX.
MAX.
3100
500
100
378
256
105
116
187
4.4
1.2
10
28
76
23
63
47
4
-
-
-
-
-
-
-
-
-
-
Rev 1.000
UNIT
UNIT
UNIT
m
m
nH
nH
nH
nH
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
V
V
A
A
V
V
C
A
A