BUK7628-100A,118 NXP Semiconductors, BUK7628-100A,118 Datasheet

MOSFET N-CH 100V 47A SOT404

BUK7628-100A,118

Manufacturer Part Number
BUK7628-100A,118
Description
MOSFET N-CH 100V 47A SOT404
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheets

Specifications of BUK7628-100A,118

Package / Case
D²Pak, TO-263 (2 leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
28 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
47A
Vgs(th) (max) @ Id
4V @ 1mA
Input Capacitance (ciss) @ Vds
3100pF @ 25V
Power - Max
166W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.028 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
47 A
Power Dissipation
166000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934055882118
BUK7628-100A /T3
BUK7628-100A /T3

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUK7628-100A,118
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
Avalanche ruggedness
E
D
DS
tot
DS(AL)S
DSon
BUK7628-100A
N-channel TrenchMOS standard level FET
Rev. 2 — 26 April 2011
AEC Q101 compliant
Automotive and general purpose
power switching
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
non-repetitive
drain-source
avalanche energy
Conditions
T
T
V
T
I
R
T
D
j
mb
GS
j
j(init)
GS
≥ 25 °C; T
= 25 °C
= 30 A; V
= 25 °C
= 10 V; I
= 50 Ω; V
= 25 °C; unclamped
sup
j
D
≤ 175 °C
GS
= 25 A;
≤ 25 V;
= 5 V;
Low conduction losses due to low
on-state resistance
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
20
-
166
Max Unit
100
47
28
45
V
A
W
mΩ
mJ

Related parts for BUK7628-100A,118

BUK7628-100A,118 Summary of contents

Page 1

... BUK7628-100A N-channel TrenchMOS standard level FET Rev. 2 — 26 April 2011 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... N-channel TrenchMOS standard level FET Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7628-100A Graphic symbol mbb076 Version SOT404 © NXP B.V. 2011. All rights reserved ...

Page 3

... I D (%) 150 200 0 T (° Fig 2. Continuous drain current as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7628-100A N-channel TrenchMOS standard level FET Min - - - -55 - Ω 003aaf150 50 100 150 T mb ≥ ...

Page 4

... −3 −2 − All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7628-100A N-channel TrenchMOS standard level FET 100 140 unclamped inductive load D Normalised drain-source non-repetitive avalanche energy rating; avalanche energy as a function of mounting base temperature 003aaf169 25 ° ...

Page 5

... P 0.02 − −3 10 −7 −6 −5 −4 −3 − All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7628-100A N-channel TrenchMOS standard level FET Min Typ - - - 50 003aaf156 t p δ − (s) p Max Unit 0.9 ...

Page 6

... °C j from source lead to source bond pad ° ° ° /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7628-100A Min Typ Max Unit 100 - - 4 500 µA - 0.05 10 µ 100 ...

Page 7

... V (V) GS Fig 10. Transfer characteristics: drain current as a 003aaf161 60 80 100 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7628-100A N-channel TrenchMOS standard level FET 65 5.5 6.0 DS(on) (mΩ °C j Drain-source on-state resistance as a function of drain current ...

Page 8

... Fig 16. Gate-source voltage as a function of gate 100 175 ° 0.2 0.4 0.6 0.8 All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7628-100A N-channel TrenchMOS standard level FET −1 −2 − typical −4 −5 − ° gate-source voltage ...

Page 9

... REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7628-100A N-channel TrenchMOS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION © NXP B.V. 2011. All rights reserved. ...

Page 10

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK7628-100A separated from data sheet BUK7528_7628-100A_1. Product specification All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7628-100A ...

Page 11

... Recommended operating conditions section (if present) or the All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7628-100A N-channel TrenchMOS standard level FET © NXP B.V. 2011. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7628-100A N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2011. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 26 April 2011 Document identifier: BUK7628-100A ...

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