BUK7628-100A,118 NXP Semiconductors, BUK7628-100A,118 Datasheet - Page 8

• Manufacturer Part Number: BUK7628-100A,118
• Description: MOSFET N-CH 100V 47A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7628-100A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 28 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 3100pF @ 25V
• Power - Max: 166W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.028 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 47 A
• Power Dissipation: 166000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934055882118; BUK7628-100A /T3; BUK7628-100A /T3

NXP Semiconductors
BUK7628-100A
Product data sheet
Fig 13. Gate-source threshold voltage as a function of
Fig 15. Input, output and reverse transfer capacitances
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
V
GS(th)
(nF)
(V)
C
5
4
3
2
1
0
−100
5
4
3
2
1
0
10
junction temperature
as a function of drain-source voltage; typical
values
I
V
V
D
−2
C
GS
GS
C
C
= 1 mA; V
oss
iss
rss
= 0 V; f = 1 MHz
= 0 V
10
−1
DS
0
= V
maximum
GS
minimum
typical
1
100
(A)
I
F
100
80
60
40
20
10
0
0
T
All information provided in this document is subject to legal disclaimers.
j
V
(°C)
003aaf163
003aaf165
DS
0.2
(V)
200
10
Rev. 2 — 26 April 2011
2
0.4
T
j
= 175 °C
0.6
Fig 14. Sub-threshold drain current as a function of
Fig 16. Gate-source voltage as a function of gate
0.8
(A)
I
D
V
(V)
10
10
10
10
10
10
GS
1.0
10
−1
−2
−3
−4
−5
−6
8
6
4
2
0
T
gate-source voltage
charge; typical values
T
T
0
0
j
j
j
= 25 °C
N-channel TrenchMOS standard level FET
= 25 °C; V
= 25 °C; I
003aaf167
1.2
V
SDS
1
(V)
1.4
V
D
DD
DS
50
= 25 A
= 14 V
= V
2 %
BUK7628-100A
2
GS
typical
3
100
V
DD
= 44 V
Q
© NXP B.V. 2011. All rights reserved.
98 %
G
4
003aaf164
V
003aaf166
(nC)
GS
(V)
150
5
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