BUK7628-100A,118 NXP Semiconductors, BUK7628-100A,118 Datasheet - Page 5

• Manufacturer Part Number: BUK7628-100A,118
• Description: MOSFET N-CH 100V 47A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7628-100A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 28 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 3100pF @ 25V
• Power - Max: 166W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.028 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 47 A
• Power Dissipation: 166000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934055882118; BUK7628-100A /T3; BUK7628-100A /T3

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK7628-100A
Product data sheet
Symbol
R
R
Fig 6.
th(j-mb)
th(j-a)
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
−3
1
10
−7
All information provided in this document is subject to legal disclaimers.
δ = 0.5
0.05
0.02
0.2
0.1
0
10
−6
Conditions
minimum footprint; FR4 board
10
Rev. 2 — 26 April 2011
−5
10
−4
10
−3
P
10
−2
t
p
10
T
−1
N-channel TrenchMOS standard level FET
003aaf156
δ =
1
t
p
T
t
(s)
t
p
10
BUK7628-100A
Min
-
-
Typ
-
50
© NXP B.V. 2011. All rights reserved.
Max
0.9
-
Unit
K/W
K/W
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