BUK7511-55A,127 NXP Semiconductors, BUK7511-55A,127 Datasheet - Page 5

• Manufacturer Part Number: BUK7511-55A,127
• Description: MOSFET N-CH 55V 75A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7511-55A,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 3093pF @ 25V
• Power - Max: 166W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.011 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 166 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Details
• Other names: 934055877127; BUK7511-55A; BUK7511-55A

NXP Semiconductors
6. Characteristics
Table 6.
BUK7511-55A
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
C
C
C
t
t
t
t
L
L
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
D
S
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
r
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
source-drain voltage
reverse recovery time
recovered charge
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
see
V
T
V
R
from contact screw on mounting base to
centre of die ; T
from drain lead 6 mm from package to
centre of die ; T
from source lead to source bond pad ;
T
I
see
I
V
All information provided in this document is subject to legal disclaimers.
D
D
D
D
D
S
S
j
j
DS
DS
DS
DS
GS
GS
GS
DS
GS
G(ext)
= 25 °C; see
= 25 °C
= 25 A; V
= 20 A; dI
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
Figure 11
Figure 11
Figure 11
Figure
Figure
Figure 15
= 55 V; V
= 55 V; V
= 0 V; V
= 0 V; V
= 30 V; R
= 10 V; I
= 10 V; I
= 0 V; V
= -10 V; V
= 10 Ω; T
Rev. 02 — 17 June 2010
12; see
12; see
GS
S
DS
DS
DS
GS
GS
DS
D
D
/dt = -100 A/µs;
GS
GS
L
DS
= 25 A; T
= 25 A; T
= 0 V; T
= V
= V
= V
Figure 14
= 1.2 Ω; V
GS
GS
= 20 V; T
= -20 V; T
= 25 V; f = 1 MHz;
j
j
j
= 25 °C
= 25 °C
= 0 V; T
= 0 V; T
= 25 °C
= 30 V; T
= 0 V; T
= 0 V; T
GS
GS
GS
Figure 13
Figure 13
; T
; T
; T
j
= 25 °C;
j
j
j
j
j
j
j
j
= -55 °C;
= 25 °C;
= 175 °C;
= 175 °C;
= 25 °C;
j
GS
= 175 °C
= 25 °C
= 25 °C
= 25 °C
j
j
j
= 25 °C
= -55 °C
= 25 °C
= 10 V;
N-channel TrenchMOS standard level FET
BUK7511-55A
Min
55
50
-
2
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
3
-
-
0.05
2
2
-
9
2230
510
290
18
90
84
68
3.5
4.5
7.5
0.85
62
140
© NXP B.V. 2010. All rights reserved.
645
-
Max
-
-
4.4
4
-
500
10
100
100
22
11
3093
467
-
-
-
-
-
-
1.2
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
V
ns
nC
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