BUK7618-55,118 NXP Semiconductors, BUK7618-55,118 Datasheet - Page 4

• Manufacturer Part Number: BUK7618-55,118
• Description: MOSFET N-CH 55V 57A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7618-55,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 57A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 2000pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.018 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 57 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934045250118; BUK7618-55 /T3; BUK7618-55 /T3

Philips Semiconductors
April 1998
TrenchMOS
Standard level FET
ID/A
Fig.5. Typical output characteristics, T
I
100
ID/A
D
Fig.6. Typical on-state resistance, T
80
60
40
20
30
25
20
15
10
100
0
= f(V
80
60
40
20
0
RDS(ON)/mOhm
0
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100
16
10
0
Fig.7. Typical transfer characteristics.
GS
1
) ; conditions: V
R
VGS/V =
I
DS(ON)
2
D
2
= f(V
Tj/C = 175
= f(I
3
transistor
8
7.5
DS
6
); parameter V
4
D
4
); parameter V
ID/A
VSD/V
VGS/V
DS
5
25
= 25 V; parameter T
6.5
6
6
VGS/V =
7
7
GS
GS
8
j
8
j
= 25 ˚C .
8
= 25 ˚C .
7
6.5
6
5.5
5
4.5
4
9
9
10
10
10
j
4
Fig.9. Normalised drain-source on-state resistance.
gfs/S
a = R
V
35
30
25
20
15
10
Fig.8. Typical transconductance, T
2.5
1.5
0.5
-100
5
0
5
4
3
2
1
0
GS(TO)
-100
2
1
0
VGS(TO) / V
a
DS(ON)
max.
min.
typ.
g
Fig.10. Gate threshold voltage.
= f(T
fs
-50
-50
/R
= f(I
20
DS(ON)25 ˚C
j
); conditions: I
BUK959-60
D
); conditions: V
0
0
Tmb / degC
40
Tj / C
= f(T
50
50
ID/A
Rds(on) normlised to 25degC
j
); I
D
= 1 mA; V
D
60
100
100
= 25 A; V
DS
Product specification
= 25 V
BUK7618-55
150
BUK759-60
150
j
80
= 25 ˚C .
DS
GS
= V
Rev 1.000
= 5 V
200
200
GS
100