BUK7E07-55B,127 NXP Semiconductors, BUK7E07-55B,127 Datasheet - Page 4

• Manufacturer Part Number: BUK7E07-55B,127
• Description: MOSFET N-CH TRENCH 55V I2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7E07-55B,127

• Package / Case: I²Pak, TO-220AB (3 straight leads + tab)
• Mounting Type: Through Hole
• Power - Max: 203W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 53nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 55V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.1 mOhm @ 25A, 10V
• Gate Charge Qg: 53 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 14.2 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 119 A
• Power Dissipation: 203 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061495127

NXP Semiconductors
5. Thermal characteristics
Table 4.
BUK7E07-55B_1
Product data sheet
Symbol
R
R
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
10
10
10
1
1
2
3
10
Thermal characteristics
Parameter
thermal resistance from junction to mounting base -
thermal resistance from junction to ambient
6
0.2
0.1
0.05
0.02
single pulse
= 0.5
10
5
10
4
Rev. 01 — 29 January 2008
10
Conditions
vertical in still air
3
N-channel TrenchMOS standard level FET
10
2
BUK7E07-55B
Min
-
-
10
P
1
Typ
-
60
© NXP B.V. 2008. All rights reserved.
t
p
T
t
p
(s)
003aac122
Max
0.74
-
=
t
T
t
p
1
4 of 12
Unit
K/W
K/W