BUK9515-100A,127 NXP Semiconductors, BUK9515-100A,127 Datasheet - Page 2

• Manufacturer Part Number: BUK9515-100A,127
• Description: MOSFET N-CH 100V 75A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9515-100A,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14.4 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 8600pF @ 25V
• Power - Max: 230W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0144 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 75 A
• Power Dissipation: 230 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Details
• Other names: 934055410127; BUK9515-100A; BUK9515-100A

Philips Semiconductors
Logic level FET
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
November 1999
TrenchMOS
j
SYMBOL PARAMETER
V
V
I
I
R
mb
SYMBOL PARAMETER
C
C
C
t
t
t
t
L
L
L
L
j
SYMBOL PARAMETER
I
I
V
t
Q
= 25˚C unless otherwise specified
DSS
GSS
d on
r
d off
f
DR
DRM
rr
= 25˚C unless otherwise specified
d
d
d
s
(BR)DSS
GS(TO)
SD
DS(ON)
iss
oss
rss
rr
= 25˚C unless otherwise specified
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
Input capacitance
Output capacitance
Feedback capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
Internal drain inductance
Internal source inductance
Continuous reverse drain
current
Pulsed reverse drain current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
transistor
CONDITIONS
V
V
V
V
V
V
V
CONDITIONS
V
V
V
Measured from drain lead 6 mm
from package to centre of die
Measured from contact screw on
tab to centre of die(TO220AB)
Measured from upper edge of drain
tab to centre of die(SOT404)
Measured from source lead to
source bond pad
CONDITIONS
I
I
I
V
F
F
F
GS
DS
DS
GS
GS
GS
GS
GS
DD
GS
GS
= 25 A; V
= 75 A; V
= 75 A; -dI
= V
= 100 V; V
= 0 V; I
= 10 V; V
= 5 V; I
= 10 V; I
= 4.5 V; I
= 0 V; V
= 30 V; R
= 5 V; R
= -10 V; V
GS
; I
2
D
D
D
GS
GS
DS
G
D
F
= 0.25 mA;
= 1 mA
= 25 A
D
/dt = 100 A/ s;
load
= 10
= 0 V
= 0 V
= 25 A
R
GS
DS
= 25 V; f = 1 MHz
= 25 A
= 30 V
=1.2 ;
= 0 V;
= 0 V
T
T
T
T
T
j
j
j
j
j
= 175˚C
= 175˚C
= 175˚C
= -55˚C
= -55˚C
MIN.
MIN.
MIN.
100
0.5
89
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
TYP.
6500
TYP.
0.05
11.5
0.85
0.24
550
325
130
400
130
1.5
4.5
3.5
2.5
7.5
1.1
BUK9515-100A
BUK9615-100A
12
45
60
2
-
-
-
-
-
-
-
-
-
Product specification
MAX.
MAX.
MAX.
8600
40.5
14.4
500
100
660
400
195
560
190
313
2.0
2.3
1.2
10
15
16
65
75
-
-
-
-
-
-
-
-
-
-
Rev 1.000
UNIT
UNIT
UNIT
m
m
m
m
nH
nH
nH
nH
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
V
V
A
A
V
V
C
A
A