BUK9604-40A,118 NXP Semiconductors, BUK9604-40A,118 Datasheet - Page 8
![MOSFET N-CH 40V 75A SOT404](/photos/5/31/53144/568-d2pak_sot404_sml.jpg)
BUK9604-40A,118
Manufacturer Part Number
BUK9604-40A,118
Description
MOSFET N-CH 40V 75A SOT404
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK9E04-40A127.pdf
(15 pages)
Specifications of BUK9604-40A,118
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
128nC @ 5V
Input Capacitance (ciss) @ Vds
8260pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.004 Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
198 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934056694118
BUK9604-40A /T3
BUK9604-40A /T3
BUK9604-40A /T3
BUK9604-40A /T3
Philips Semiconductors
9397 750 08649
Product data
Fig 13. Transfer characteristics: drain current as a
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
V
V
DS
GS
function of gate-source voltage; typical values.
= 25 V
= 0 V
I D
(A)
100
80
60
40
20
0
0
T j = 175 ºC
1
2
T j = 25 ºC
I S
(A)
100
3
80
60
40
20
0
V GS (V)
0.0
Rev. 01 — 24 October 2001
4
0.2
T j = 175 ºC
0.4
Fig 14. Gate-source voltage as a function of turn-on
0.6
T
j
= 25 C; I
T j = 25 ºC
0.8
gate charge; typical values.
V GS
(V)
V SD (V)
03nd90
5
4
3
2
1
0
BUK95/96/9E04-40A
0
1.0
D
= 25 A
20
V DD = 14 V
40
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
60
80
V DD = 32 V
100
120
Q G (nC)
140
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