BUK7606-55B,118 NXP Semiconductors, BUK7606-55B,118 Datasheet - Page 9

• Manufacturer Part Number: BUK7606-55B,118
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7606-55B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 254W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 64nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 55V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0063 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 154 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057692118::BUK7606-55B /T3::BUK7606-55B /T3

NXP Semiconductors
BUK7606-55B
Product data sheet
Fig 13. Gate-source voltage as a function of turn-on
Fig 15. Source current as a function of source-drain voltage; typical values
V
(V)
GS
10
8
6
4
2
0
gate charge; typical values
0
V
20
DD
= 14 V
40
V
(A)
DD
I
S
100
75
50
25
= 44 V
60
0
0.0
All information provided in this document is subject to legal disclaimers.
Q
G
(nC)
03nl89
80
0.3
Rev. 02 — 21 June 2010
T
j
= 175 °C
0.6
Fig 14. Input, output and reverse transfer capacitances
(pF)
6000
4000
2000
C
0.9
0
10
T
as a function of drain-source voltage; typical
values
j
−2
= 25 °C
V
N-channel TrenchMOS standard level FET
SD
03nl88
(V)
1.2
10
−1
BUK7606-55B
1
C
C
C
iss
oss
rss
10
© NXP B.V. 2010. All rights reserved.
V
DS
(V)
03nl95
10
2
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