BUK7606-55B,118 NXP Semiconductors, BUK7606-55B,118 Datasheet - Page 9
![MOSFET N-CH 55V 75A D2PAK](/photos/5/31/53144/568-d2pak_sot404_sml.jpg)
BUK7606-55B,118
Manufacturer Part Number
BUK7606-55B,118
Description
MOSFET N-CH 55V 75A D2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK7606-55B118.pdf
(14 pages)
Specifications of BUK7606-55B,118
Package / Case
D²Pak, TO-263 (2 leads + tab)
Mounting Type
Surface Mount
Power - Max
254W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
64nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
55V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0063 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
154 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057692118::BUK7606-55B /T3::BUK7606-55B /T3
NXP Semiconductors
BUK7606-55B
Product data sheet
Fig 13. Gate-source voltage as a function of turn-on
Fig 15. Source current as a function of source-drain voltage; typical values
V
(V)
GS
10
8
6
4
2
0
gate charge; typical values
0
V
20
DD
= 14 V
40
V
(A)
DD
I
S
100
75
50
25
= 44 V
60
0
0.0
All information provided in this document is subject to legal disclaimers.
Q
G
(nC)
03nl89
80
0.3
Rev. 02 — 21 June 2010
T
j
= 175 °C
0.6
Fig 14. Input, output and reverse transfer capacitances
(pF)
6000
4000
2000
C
0.9
0
10
T
as a function of drain-source voltage; typical
values
j
−2
= 25 °C
V
N-channel TrenchMOS standard level FET
SD
03nl88
(V)
1.2
10
−1
BUK7606-55B
1
C
C
C
iss
oss
rss
10
© NXP B.V. 2010. All rights reserved.
V
DS
(V)
03nl95
10
2
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