BUK7107-40ATC,118 NXP Semiconductors, BUK7107-40ATC,118 Datasheet - Page 7

• Manufacturer Part Number: BUK7107-40ATC,118
• Description: MOSFET N-CH 40V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7107-40ATC,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 7 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 108nC @ 10V
• Input Capacitance (ciss) @ Vds: 4500pF @ 25V
• Power - Max: 272W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (4 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 140 A
• Power Dissipation: 272 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057269118; BUK7107-40ATC /T3; BUK7107-40ATC /T3

NXP Semiconductors
Table 6.
BUK7107-40ATC_2
Product data sheet
Symbol
t
t
t
t
L
L
Source-drain diode
V
t
Q
d(on)
r
d(off)
f
rr
D
S
SD
r
Characteristics
Parameter
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
source-drain voltage
reverse recovery time
recovered charge
…continued
Conditions
V
R
from upper edge of drain mounting base to
centre of die; T
from source lead to source bond pad;
T
I
see
I
V
S
S
j
DS
G(ext)
DS
= 25 °C
= 25 A; V
= 20 A; dI
Figure 19
= 30 V; R
= 30 V; T
= 1 kΩ; T
Rev. 02 — 6 February 2009
GS
S
/dt = -100 A/µs; V
j
L
= 25 °C
= 0 V; T
j
= 1.2 Ω; V
= 25 °C
j
= 25 °C
j
= 25 °C;
GS
= 10 V;
GS
= -10 V;
N-channel TrenchPLUS standard level FET
BUK7107-40ATC
Min
-
-
-
-
-
-
-
-
-
Typ
2
5.7
8.9
6.8
2.5
7.5
0.85
80
200
© NXP B.V. 2009. All rights reserved.
Max
-
-
-
-
-
-
1.2
-
-
Unit
µs
µs
µs
µs
nH
nH
V
ns
nC
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